| Summary: | Zirconium pentatelluride ZrTe _5 , a fascinating topological material platform, hosts exotic chiral fermions in its highly anisotropic three-dimensional Dirac band and holds great promise advancing the next-generation information technology. However, the origin underlying its anomalous resistivity peak has been under debate for decades. Here we provide transport evidence substantiating the anomaly to be a direct manifestation of a Lifshitz transition in the Dirac band with an ultrahigh carrier mobility exceeding 3 × 10 ^5 cm ^2 V ^−1 s ^−1 . We demonstrate that the Lifshitz transition is readily controllable by means of carrier doping, which sets the anomaly peak temperature T _p . T _p is found to scale approximately as ${n}_{{\rm{H}}}^{0.27},$ where the Hall carrier concentration n _H is linked with the Fermi level by ε _F ∝ ${n}_{{\rm{H}}}^{1/3}$ in a linearly dispersed Dirac band. This relation indicates T _p monotonically increases with ε _F , which serves as an effective knob for fine tuning transport properties in pentatelluride-based Dirac semimetals.
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