Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors
We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm<sup>2</sup>·V<sup>−1</sup>·s&l...
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2020-07-01
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| Online Access: | https://www.mdpi.com/1996-1944/13/14/3055 |
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| author | Min-Gyu Shin Kang-Hwan Bae Hyun-Seok Cha Hwan-Seok Jeong Dae-Hwan Kim Hyuck-In Kwon |
| author_facet | Min-Gyu Shin Kang-Hwan Bae Hyun-Seok Cha Hwan-Seok Jeong Dae-Hwan Kim Hyuck-In Kwon |
| author_sort | Min-Gyu Shin |
| collection | DOAJ |
| description | We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>. The increase in mobility was more significant as the length of Ni capping layer increased and the thickness of SnO active layer decreased. The observed phenomenon was possibly attributed to the changed vertical electric field distribution and increased hole concentration in the SnO channel by the floating Ni capping layer. Our experimental results demonstrate that incorporating the floating Ni capping layer on the channel layer is an effective method for increasing the field-effect mobility in p-channel SnO TFTs. |
| first_indexed | 2024-03-10T18:36:10Z |
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| id | doaj.art-0492c3e031ca4bb19df7885270f7fc3c |
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| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T18:36:10Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-0492c3e031ca4bb19df7885270f7fc3c2023-11-20T06:12:14ZengMDPI AGMaterials1996-19442020-07-011314305510.3390/ma13143055Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film TransistorsMin-Gyu Shin0Kang-Hwan Bae1Hyun-Seok Cha2Hwan-Seok Jeong3Dae-Hwan Kim4Hyuck-In Kwon5School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaWe utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>. The increase in mobility was more significant as the length of Ni capping layer increased and the thickness of SnO active layer decreased. The observed phenomenon was possibly attributed to the changed vertical electric field distribution and increased hole concentration in the SnO channel by the floating Ni capping layer. Our experimental results demonstrate that incorporating the floating Ni capping layer on the channel layer is an effective method for increasing the field-effect mobility in p-channel SnO TFTs.https://www.mdpi.com/1996-1944/13/14/3055p-channel SnOthin-film transistorfloating Ni capping layerhigh mobilitybulk channelpercolation conduction |
| spellingShingle | Min-Gyu Shin Kang-Hwan Bae Hyun-Seok Cha Hwan-Seok Jeong Dae-Hwan Kim Hyuck-In Kwon Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors Materials p-channel SnO thin-film transistor floating Ni capping layer high mobility bulk channel percolation conduction |
| title | Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors |
| title_full | Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors |
| title_fullStr | Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors |
| title_full_unstemmed | Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors |
| title_short | Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors |
| title_sort | floating ni capping for high mobility p channel sno thin film transistors |
| topic | p-channel SnO thin-film transistor floating Ni capping layer high mobility bulk channel percolation conduction |
| url | https://www.mdpi.com/1996-1944/13/14/3055 |
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