Effect of Sr Doping on Structural and Transport Properties of Bi<sub>2</sub>Te<sub>3</sub>

Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow&...

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Bibliographic Details
Main Authors: Yurii G. Selivanov, Victor P. Martovitskii, Mikhail I. Bannikov, Aleksandr Y. Kuntsevich
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/14/24/7528
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Summary:Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Te<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> single crystals. We found that Bridgman grown samples have <i>p</i>-type conductivity in the low 10<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>19</mn></msup></semantics></math></inline-formula> cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mrow><mo>−</mo><mn>3</mn></mrow></msup></semantics></math></inline-formula>, high mobility of 4000 cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula>V<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></semantics></math></inline-formula>s<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></semantics></math></inline-formula>, crystal structure independent on nominal dopant content, and no signs of superconductivity. We also studied molecular beam epitaxy grown Sr<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mi>x</mi></msub></semantics></math></inline-formula>Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mrow><mn>2</mn><mo>−</mo><mi>x</mi></mrow></msub></semantics></math></inline-formula>Te<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> films on lattice matched (1 1 1) BaF<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> polar surface. Contrary to the bulk crystals thin films have <i>n</i>-type conductivity. Carrier concentration, mobility and <i>c</i>-lattice constant demonstrate pronounced dependence on Sr concentration <i>x</i>. Variation of the parameters did not lead to superconductivity. We revealed, that transport and structural parameters are governed by Sr dopants incorporation in randomly inserted Bi bilayers into the parent matrix. Thus, our data shed light on the structural position of dopant in Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Te<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> and should be helpful for further design of topological insulator-based superconductors.
ISSN:1996-1944