Research progress on terahertz integrated power amplifier
In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier. According to the kinds of base material in i...
| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2019-07-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000105763 |
| Summary: | In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier. According to the kinds of base material in integrated circuit(IC) design, compound including InP and GaAs terahertz amplifier IC are compared with those made by silicon including bulk CMOS and SiGe. Basing on this category standard by material, the performances of terahertz amplifier IC are analyzed and concluded in the aspects of circuit topology and specifications. |
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| ISSN: | 0258-7998 |