Research progress on terahertz integrated power amplifier
In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier. According to the kinds of base material in i...
| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2019-07-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000105763 |
| _version_ | 1819068051843186688 |
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| author | Han Jiangan Cheng Xu |
| author_facet | Han Jiangan Cheng Xu |
| author_sort | Han Jiangan |
| collection | DOAJ |
| description | In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier. According to the kinds of base material in integrated circuit(IC) design, compound including InP and GaAs terahertz amplifier IC are compared with those made by silicon including bulk CMOS and SiGe. Basing on this category standard by material, the performances of terahertz amplifier IC are analyzed and concluded in the aspects of circuit topology and specifications. |
| first_indexed | 2024-12-21T16:28:00Z |
| format | Article |
| id | doaj.art-04a1c99c327041798c9db4f5d5a37ddf |
| institution | Directory Open Access Journal |
| issn | 0258-7998 |
| language | zho |
| last_indexed | 2024-12-21T16:28:00Z |
| publishDate | 2019-07-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj.art-04a1c99c327041798c9db4f5d5a37ddf2022-12-21T18:57:24ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982019-07-01457192210.16157/j.issn.0258-7998.1997043000105763Research progress on terahertz integrated power amplifierHan Jiangan0Cheng Xu1Microsystem & Terahertz Research Center，China Academy of Engineering Physics，Chengdu 610299，ChinaMicrosystem & Terahertz Research Center，China Academy of Engineering Physics，Chengdu 610299，ChinaIn this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier. According to the kinds of base material in integrated circuit(IC) design, compound including InP and GaAs terahertz amplifier IC are compared with those made by silicon including bulk CMOS and SiGe. Basing on this category standard by material, the performances of terahertz amplifier IC are analyzed and concluded in the aspects of circuit topology and specifications.http://www.chinaaet.com/article/3000105763terahertzintegrated circuitpower amplifiermmic |
| spellingShingle | Han Jiangan Cheng Xu Research progress on terahertz integrated power amplifier Dianzi Jishu Yingyong terahertz integrated circuit power amplifier mmic |
| title | Research progress on terahertz integrated power amplifier |
| title_full | Research progress on terahertz integrated power amplifier |
| title_fullStr | Research progress on terahertz integrated power amplifier |
| title_full_unstemmed | Research progress on terahertz integrated power amplifier |
| title_short | Research progress on terahertz integrated power amplifier |
| title_sort | research progress on terahertz integrated power amplifier |
| topic | terahertz integrated circuit power amplifier mmic |
| url | http://www.chinaaet.com/article/3000105763 |
| work_keys_str_mv | AT hanjiangan researchprogressonterahertzintegratedpoweramplifier AT chengxu researchprogressonterahertzintegratedpoweramplifier |