The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Universitas Syiah Kuala, Faculty of Mathematics and Natural Science
2014-07-01
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| Series: | Jurnal Natural |
| Online Access: | http://www.jurnal.unsyiah.ac.id/natural/article/view/1518 |
| _version_ | 1797230498764816384 |
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| author | Mursal Mursal Irhamni Irhamni T Winata |
| author_facet | Mursal Mursal Irhamni Irhamni T Winata |
| author_sort | Mursal Mursal |
| collection | DOAJ |
| description | The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content. |
| first_indexed | 2024-04-24T15:29:27Z |
| format | Article |
| id | doaj.art-04e3d73151344ce5bf421925445a8678 |
| institution | Directory Open Access Journal |
| issn | 1411-8513 2541-4062 |
| language | English |
| last_indexed | 2024-04-24T15:29:27Z |
| publishDate | 2014-07-01 |
| publisher | Universitas Syiah Kuala, Faculty of Mathematics and Natural Science |
| record_format | Article |
| series | Jurnal Natural |
| spelling | doaj.art-04e3d73151344ce5bf421925445a86782024-04-02T04:25:14ZengUniversitas Syiah Kuala, Faculty of Mathematics and Natural ScienceJurnal Natural1411-85132541-40622014-07-011411447The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin FilmsMursal MursalIrhamni IrhamniT WinataThe effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.http://www.jurnal.unsyiah.ac.id/natural/article/view/1518 |
| spellingShingle | Mursal Mursal Irhamni Irhamni T Winata The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films Jurnal Natural |
| title | The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
| title_full | The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
| title_fullStr | The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
| title_full_unstemmed | The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
| title_short | The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films |
| title_sort | effect of ge content on the optical and electrical properties of a sige h thin films |
| url | http://www.jurnal.unsyiah.ac.id/natural/article/view/1518 |
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