Ferroelectric topologically configurable multilevel logic unit
Multilevel devices demonstrating switchable polarization enable us to efficiently realize neuromorphic functionalities including synaptic plasticity and neuronal activity. Here we propose using the ferroelectric logic unit comprising multiple nanodots disposed between two electrodes and coated by th...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2023-01-01
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| Series: | Neuromorphic Computing and Engineering |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2634-4386/acce61 |
| _version_ | 1827950986646257664 |
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| author | Anna G Razumnaya Yuri A Tikhonov Valerii M Vinokur Igor A Lukyanchuk |
| author_facet | Anna G Razumnaya Yuri A Tikhonov Valerii M Vinokur Igor A Lukyanchuk |
| author_sort | Anna G Razumnaya |
| collection | DOAJ |
| description | Multilevel devices demonstrating switchable polarization enable us to efficiently realize neuromorphic functionalities including synaptic plasticity and neuronal activity. Here we propose using the ferroelectric logic unit comprising multiple nanodots disposed between two electrodes and coated by the dielectric material. We devise the integration of the ferroelectric logic unit, providing topologically configurable non-binary logic into a gate stack of the field-effect transistor as an analog-like device with resistive states. By controlling the charge of the gate, we demonstrate the various routes of the topological switchings between different polarization configurations in ferroelectric nanodots. Switching routes between different logic levels are characterized by hysteresis loops with multiple branches realizing specific interconnectivity regimes. The switching between different types of hysteresis loops is achieved by the variation of external fields and temperature. The devised ferroelectric multilevel devices provide a pathway toward the novel topologically-controlled implementation of discrete synaptic states in neuromorphic computing. |
| first_indexed | 2024-04-09T13:34:37Z |
| format | Article |
| id | doaj.art-0530acd558b34009bac74ea3f5a9838b |
| institution | Directory Open Access Journal |
| issn | 2634-4386 |
| language | English |
| last_indexed | 2024-04-09T13:34:37Z |
| publishDate | 2023-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Neuromorphic Computing and Engineering |
| spelling | doaj.art-0530acd558b34009bac74ea3f5a9838b2023-05-09T11:35:23ZengIOP PublishingNeuromorphic Computing and Engineering2634-43862023-01-013202400310.1088/2634-4386/acce61Ferroelectric topologically configurable multilevel logic unitAnna G Razumnaya0https://orcid.org/0000-0001-8486-7303Yuri A Tikhonov1Valerii M Vinokur2https://orcid.org/0000-0002-0977-3515Igor A Lukyanchuk3Jožef Stefan Institute , Jamova Cesta 39, Ljubljana, Ljubljana 1000, SloveniaLaboratoire de Physique de la Matiére Condensée, Université de Picardie Jules Verne , Amiens 80080, FranceTerra Quantum AG , St. Gallen CH-9000, SwitzerlandLaboratoire de Physique de la Matiére Condensée, Université de Picardie Jules Verne , Amiens 80080, France; Terra Quantum AG , St. Gallen CH-9000, SwitzerlandMultilevel devices demonstrating switchable polarization enable us to efficiently realize neuromorphic functionalities including synaptic plasticity and neuronal activity. Here we propose using the ferroelectric logic unit comprising multiple nanodots disposed between two electrodes and coated by the dielectric material. We devise the integration of the ferroelectric logic unit, providing topologically configurable non-binary logic into a gate stack of the field-effect transistor as an analog-like device with resistive states. By controlling the charge of the gate, we demonstrate the various routes of the topological switchings between different polarization configurations in ferroelectric nanodots. Switching routes between different logic levels are characterized by hysteresis loops with multiple branches realizing specific interconnectivity regimes. The switching between different types of hysteresis loops is achieved by the variation of external fields and temperature. The devised ferroelectric multilevel devices provide a pathway toward the novel topologically-controlled implementation of discrete synaptic states in neuromorphic computing.https://doi.org/10.1088/2634-4386/acce61ferroelectricsmultilevel logicnon-von Neumann computingfield-effect transistor |
| spellingShingle | Anna G Razumnaya Yuri A Tikhonov Valerii M Vinokur Igor A Lukyanchuk Ferroelectric topologically configurable multilevel logic unit Neuromorphic Computing and Engineering ferroelectrics multilevel logic non-von Neumann computing field-effect transistor |
| title | Ferroelectric topologically configurable multilevel logic unit |
| title_full | Ferroelectric topologically configurable multilevel logic unit |
| title_fullStr | Ferroelectric topologically configurable multilevel logic unit |
| title_full_unstemmed | Ferroelectric topologically configurable multilevel logic unit |
| title_short | Ferroelectric topologically configurable multilevel logic unit |
| title_sort | ferroelectric topologically configurable multilevel logic unit |
| topic | ferroelectrics multilevel logic non-von Neumann computing field-effect transistor |
| url | https://doi.org/10.1088/2634-4386/acce61 |
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