Multi-Segment TFT Compact Model for THz Applications
We present an update of the Rensselaer Polytechnic Institute (RPI) thin-film transistor (TFT) compact model. The updated model implemented in Simulation Program with Integrated Circuit Emphasis (SPICE) accounts for the gate voltage-dependent channel layer thickness, enables the accurate description...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/5/765 |
| _version_ | 1797474270038720512 |
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| author | Xueqing Liu Trond Ytterdal Michael Shur |
| author_facet | Xueqing Liu Trond Ytterdal Michael Shur |
| author_sort | Xueqing Liu |
| collection | DOAJ |
| description | We present an update of the Rensselaer Polytechnic Institute (RPI) thin-film transistor (TFT) compact model. The updated model implemented in Simulation Program with Integrated Circuit Emphasis (SPICE) accounts for the gate voltage-dependent channel layer thickness, enables the accurate description of the direct current (DC) characteristics, and uses channel segmentation to allow for terahertz (THz) frequency simulations. The model introduces two subthreshold ideality factors to describe the control of the gate voltage on the channel layer and its effect on the drain-to-source current and the channel capacitance. The calculated field distribution in the channel is used to evaluate the channel segment parameters including the segment impedance, kinetic inductance, and gate-to-segment capacitances. Our approach reproduces the conventional RPI TFT model at low frequencies, fits the measured current–voltage characteristics with sufficient accuracy, and extends the RPI TFT model applications into the THz frequency range. Our calculations show that a single TFT or complementary TFTs could efficiently detect the sub-terahertz and terahertz radiation. |
| first_indexed | 2024-03-09T20:27:47Z |
| format | Article |
| id | doaj.art-054331df32a4436197fea3950fdf7280 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T20:27:47Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-054331df32a4436197fea3950fdf72802023-11-23T23:29:48ZengMDPI AGNanomaterials2079-49912022-02-0112576510.3390/nano12050765Multi-Segment TFT Compact Model for THz ApplicationsXueqing Liu0Trond Ytterdal1Michael Shur2Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USADepartment of Electronic Systems, Norwegian University of Science and Technology, 7491 Trondheim, NorwayDepartment of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USAWe present an update of the Rensselaer Polytechnic Institute (RPI) thin-film transistor (TFT) compact model. The updated model implemented in Simulation Program with Integrated Circuit Emphasis (SPICE) accounts for the gate voltage-dependent channel layer thickness, enables the accurate description of the direct current (DC) characteristics, and uses channel segmentation to allow for terahertz (THz) frequency simulations. The model introduces two subthreshold ideality factors to describe the control of the gate voltage on the channel layer and its effect on the drain-to-source current and the channel capacitance. The calculated field distribution in the channel is used to evaluate the channel segment parameters including the segment impedance, kinetic inductance, and gate-to-segment capacitances. Our approach reproduces the conventional RPI TFT model at low frequencies, fits the measured current–voltage characteristics with sufficient accuracy, and extends the RPI TFT model applications into the THz frequency range. Our calculations show that a single TFT or complementary TFTs could efficiently detect the sub-terahertz and terahertz radiation.https://www.mdpi.com/2079-4991/12/5/765terahertzTFTcompact modelSPICE |
| spellingShingle | Xueqing Liu Trond Ytterdal Michael Shur Multi-Segment TFT Compact Model for THz Applications Nanomaterials terahertz TFT compact model SPICE |
| title | Multi-Segment TFT Compact Model for THz Applications |
| title_full | Multi-Segment TFT Compact Model for THz Applications |
| title_fullStr | Multi-Segment TFT Compact Model for THz Applications |
| title_full_unstemmed | Multi-Segment TFT Compact Model for THz Applications |
| title_short | Multi-Segment TFT Compact Model for THz Applications |
| title_sort | multi segment tft compact model for thz applications |
| topic | terahertz TFT compact model SPICE |
| url | https://www.mdpi.com/2079-4991/12/5/765 |
| work_keys_str_mv | AT xueqingliu multisegmenttftcompactmodelforthzapplications AT trondytterdal multisegmenttftcompactmodelforthzapplications AT michaelshur multisegmenttftcompactmodelforthzapplications |