Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
Summary: Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly ap...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2021-11-01
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| Series: | iScience |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589004221013456 |
| _version_ | 1818651746431401984 |
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| author | Isaac G. Juma Gwangwoo Kim Deep Jariwala Sanjay K. Behura |
| author_facet | Isaac G. Juma Gwangwoo Kim Deep Jariwala Sanjay K. Behura |
| author_sort | Isaac G. Juma |
| collection | DOAJ |
| description | Summary: Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly approaches present impediments to obtaining high-quality and wafer-scale quantum material. Here, we have presented our perspective on the synthetic strategies that involve direct nucleation of h-BN on various dielectric substrates and its heterostructures with graphene. Mechanistic understanding of direct growth of h-BN via bottom-up approaches such as (a) the chemical-interaction guided nucleation on silicon-based dielectrics, (b) surface nitridation and N+ sputtering of h-BN target on sapphire, and (c) epitaxial growth of h-BN on sapphire, among others, are reviewed. Several design methodologies are presented for the direct growth of vertical and lateral vdW heterostructures of h-BN and graphene. These complex 2D heterostructures exhibit various physical phenomena and could potentially have a range of practical applications. |
| first_indexed | 2024-12-17T02:11:01Z |
| format | Article |
| id | doaj.art-05487cfbdb714e5b835c31f555b3aa1f |
| institution | Directory Open Access Journal |
| issn | 2589-0042 |
| language | English |
| last_indexed | 2024-12-17T02:11:01Z |
| publishDate | 2021-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | iScience |
| spelling | doaj.art-05487cfbdb714e5b835c31f555b3aa1f2022-12-21T22:07:32ZengElsevieriScience2589-00422021-11-012411103374Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with grapheneIsaac G. Juma0Gwangwoo Kim1Deep Jariwala2Sanjay K. Behura3Department of Chemistry and Physics, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA; Department of Mathematics and Computer Science, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USADepartment of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USADepartment of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USADepartment of Chemistry and Physics, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA; Department of Mathematics and Computer Science, University of Arkansas at Pine Bluff, 1200 N. University Drive, Pine Bluff, AR 71601, USA; Corresponding authorSummary: Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly approaches present impediments to obtaining high-quality and wafer-scale quantum material. Here, we have presented our perspective on the synthetic strategies that involve direct nucleation of h-BN on various dielectric substrates and its heterostructures with graphene. Mechanistic understanding of direct growth of h-BN via bottom-up approaches such as (a) the chemical-interaction guided nucleation on silicon-based dielectrics, (b) surface nitridation and N+ sputtering of h-BN target on sapphire, and (c) epitaxial growth of h-BN on sapphire, among others, are reviewed. Several design methodologies are presented for the direct growth of vertical and lateral vdW heterostructures of h-BN and graphene. These complex 2D heterostructures exhibit various physical phenomena and could potentially have a range of practical applications.http://www.sciencedirect.com/science/article/pii/S2589004221013456Nanotechnology fabricationMaterials synthesisNanomaterials |
| spellingShingle | Isaac G. Juma Gwangwoo Kim Deep Jariwala Sanjay K. Behura Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene iScience Nanotechnology fabrication Materials synthesis Nanomaterials |
| title | Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene |
| title_full | Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene |
| title_fullStr | Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene |
| title_full_unstemmed | Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene |
| title_short | Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene |
| title_sort | direct growth of hexagonal boron nitride on non metallic substrates and its heterostructures with graphene |
| topic | Nanotechnology fabrication Materials synthesis Nanomaterials |
| url | http://www.sciencedirect.com/science/article/pii/S2589004221013456 |
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