Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory
Memristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing. However, the sneak current through the unselected cells becomes a fundamental roadblock to their development, resulting in misreading and high power consumption. In this regard, we theor...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-10-01
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| Series: | Memories - Materials, Devices, Circuits and Systems |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2773064623000579 |
| _version_ | 1797656094186668032 |
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| author | Avinash Kumar Gupta Mani Shankar Yadav Brajesh Rawat |
| author_facet | Avinash Kumar Gupta Mani Shankar Yadav Brajesh Rawat |
| author_sort | Avinash Kumar Gupta |
| collection | DOAJ |
| description | Memristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing. However, the sneak current through the unselected cells becomes a fundamental roadblock to their development, resulting in misreading and high power consumption. In this regard, we theoretically investigate the Pt/Ti/NbO2/Nb2O5−x/Pt-based self-selective memristor, which combines the inherent nonlinearity of the NbO2 switching layer and the non-volatile operation of the Nb2O5−x memory layer in a single device. The results show that the Pt/Ti/NbO2/Nb2O5−x/Pt-based self-selective memristor offers the sneak current of 310 nA, selectivity of around 174, and on/off current ratio of 75, compared to the sneak current of approximately 70 μA, selectivity of about 4.02, and on/off current ratio of around 1.55 for the Pt/Ti/Nb2O5−x/Pt-based memristor device. Our self-selective memristor minimizes the sneak current, but a small on/off current ratio limits their readout margin and power efficiency for crossbar array size greater than 4KB. Further, we demonstrate that breaking down a large-scale crossbar array into smaller subarrays and separating them by transistor switches, called the split crossbar array, is a more efficient way of achieving a practical size crossbar array with improved readout margin and power efficiency. Our results shed light on the potential of the Pt/Ti/NbO2/Nb2O5−x/Pt-based self-selective memristor and explore the split crossbar array architecture as a practical solution to augment readout margins and power efficiency in a large-scale crossbar array. |
| first_indexed | 2024-03-11T17:24:23Z |
| format | Article |
| id | doaj.art-05709b23b6114e0f8bc69bc610fcda7a |
| institution | Directory Open Access Journal |
| issn | 2773-0646 |
| language | English |
| last_indexed | 2024-03-11T17:24:23Z |
| publishDate | 2023-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Memories - Materials, Devices, Circuits and Systems |
| spelling | doaj.art-05709b23b6114e0f8bc69bc610fcda7a2023-10-19T04:23:09ZengElsevierMemories - Materials, Devices, Circuits and Systems2773-06462023-10-015100080Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memoryAvinash Kumar Gupta0Mani Shankar Yadav1Brajesh Rawat2Department of Electrical Engineering, Indian Institute of Technology Ropar, Rupnagar, Punjab, IndiaDepartment of Electrical Engineering, Indian Institute of Technology Ropar, Rupnagar, Punjab, IndiaCorresponding author.; Department of Electrical Engineering, Indian Institute of Technology Ropar, Rupnagar, Punjab, IndiaMemristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing. However, the sneak current through the unselected cells becomes a fundamental roadblock to their development, resulting in misreading and high power consumption. In this regard, we theoretically investigate the Pt/Ti/NbO2/Nb2O5−x/Pt-based self-selective memristor, which combines the inherent nonlinearity of the NbO2 switching layer and the non-volatile operation of the Nb2O5−x memory layer in a single device. The results show that the Pt/Ti/NbO2/Nb2O5−x/Pt-based self-selective memristor offers the sneak current of 310 nA, selectivity of around 174, and on/off current ratio of 75, compared to the sneak current of approximately 70 μA, selectivity of about 4.02, and on/off current ratio of around 1.55 for the Pt/Ti/Nb2O5−x/Pt-based memristor device. Our self-selective memristor minimizes the sneak current, but a small on/off current ratio limits their readout margin and power efficiency for crossbar array size greater than 4KB. Further, we demonstrate that breaking down a large-scale crossbar array into smaller subarrays and separating them by transistor switches, called the split crossbar array, is a more efficient way of achieving a practical size crossbar array with improved readout margin and power efficiency. Our results shed light on the potential of the Pt/Ti/NbO2/Nb2O5−x/Pt-based self-selective memristor and explore the split crossbar array architecture as a practical solution to augment readout margins and power efficiency in a large-scale crossbar array.http://www.sciencedirect.com/science/article/pii/S2773064623000579Self-selectiveMemory computationNumerical modelingNiobium oxide (NbO2)Crossbar architecture |
| spellingShingle | Avinash Kumar Gupta Mani Shankar Yadav Brajesh Rawat Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory Memories - Materials, Devices, Circuits and Systems Self-selective Memory computation Numerical modeling Niobium oxide (NbO2) Crossbar architecture |
| title | Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory |
| title_full | Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory |
| title_fullStr | Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory |
| title_full_unstemmed | Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory |
| title_short | Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory |
| title_sort | device circuit co design of memristor based on niobium oxide for large scale crossbar memory |
| topic | Self-selective Memory computation Numerical modeling Niobium oxide (NbO2) Crossbar architecture |
| url | http://www.sciencedirect.com/science/article/pii/S2773064623000579 |
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