Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory
Memristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing. However, the sneak current through the unselected cells becomes a fundamental roadblock to their development, resulting in misreading and high power consumption. In this regard, we theor...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2023-10-01
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Series: | Memories - Materials, Devices, Circuits and Systems |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2773064623000579 |