Advances of beveled mesas for GaN-based trench Schottky barrier diodes
In this article, we propose and investigate a GaN-based trench metal–insulator–semiconductor barrier Schottky rectifier with a beveled mesa and field plate (BM-TMBS). According to our study, the beveled mesa and field plate structures help to reduce the density of potential lines at the mesa corner...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0033844 |