Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering

Rare-earth nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, and infinite layer RNiO2) have attracted tremendous interest very recently. However, unlike the widely studied RNiO3 and RNiO2 films, the synthesis of trilayer nickelate R4Ni3O10 films is rarely reported. Here, single-crystalline (N...

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Main Authors: Jiachang Bi, Yujuan Pei, Ruyi Zhang, Shaoqin Peng, Xinming Wang, Jie Sun, Jiagui Feng, Jingkai Yang, Yanwei Cao
Format: Article
Language:English
Published: AIP Publishing LLC 2021-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0064201
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author Jiachang Bi
Yujuan Pei
Ruyi Zhang
Shaoqin Peng
Xinming Wang
Jie Sun
Jiagui Feng
Jingkai Yang
Yanwei Cao
author_facet Jiachang Bi
Yujuan Pei
Ruyi Zhang
Shaoqin Peng
Xinming Wang
Jie Sun
Jiagui Feng
Jingkai Yang
Yanwei Cao
author_sort Jiachang Bi
collection DOAJ
description Rare-earth nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, and infinite layer RNiO2) have attracted tremendous interest very recently. However, unlike the widely studied RNiO3 and RNiO2 films, the synthesis of trilayer nickelate R4Ni3O10 films is rarely reported. Here, single-crystalline (Nd0.8Sr0.2)4Ni3O10 epitaxial films were coherently grown on SrTiO3 substrates by high-pressure magnetron sputtering. The crystal and electronic structures of (Nd0.8Sr0.2)4Ni3O10 films with oxygen ligand holes were characterized by high-resolution x-ray diffraction, x-ray photoemission spectroscopy, and resonant soft x-ray absorption spectroscopy. The electrical transport measurements reveal a metal–insulator transition behavior near 82 K and negative magnetoresistance in (Nd0.8Sr0.2)4Ni3O10 films. Our work provides a novel route to synthesize high-quality trilayer nickelate R4Ni3O10 films with RNiO3 targets by high-pressure magnetron sputtering.
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spelling doaj.art-05c32bbc8948403b84d5180f31c30ab42022-12-22T04:05:19ZengAIP Publishing LLCAIP Advances2158-32262021-10-011110105107105107-610.1063/5.0064201Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputteringJiachang Bi0Yujuan Pei1Ruyi Zhang2Shaoqin Peng3Xinming Wang4Jie Sun5Jiagui Feng6Jingkai Yang7Yanwei Cao8Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, ChinaSchool of Physics, Harbin Institute of Technology, Harbin 150001, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, ChinaKey Laboratory of Applied Chemistry, Hebei Key Laboratory of Heavy Metal Deep-remediation in Water and Resource Reuse, College of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, ChinaRare-earth nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, and infinite layer RNiO2) have attracted tremendous interest very recently. However, unlike the widely studied RNiO3 and RNiO2 films, the synthesis of trilayer nickelate R4Ni3O10 films is rarely reported. Here, single-crystalline (Nd0.8Sr0.2)4Ni3O10 epitaxial films were coherently grown on SrTiO3 substrates by high-pressure magnetron sputtering. The crystal and electronic structures of (Nd0.8Sr0.2)4Ni3O10 films with oxygen ligand holes were characterized by high-resolution x-ray diffraction, x-ray photoemission spectroscopy, and resonant soft x-ray absorption spectroscopy. The electrical transport measurements reveal a metal–insulator transition behavior near 82 K and negative magnetoresistance in (Nd0.8Sr0.2)4Ni3O10 films. Our work provides a novel route to synthesize high-quality trilayer nickelate R4Ni3O10 films with RNiO3 targets by high-pressure magnetron sputtering.http://dx.doi.org/10.1063/5.0064201
spellingShingle Jiachang Bi
Yujuan Pei
Ruyi Zhang
Shaoqin Peng
Xinming Wang
Jie Sun
Jiagui Feng
Jingkai Yang
Yanwei Cao
Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
AIP Advances
title Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
title_full Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
title_fullStr Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
title_full_unstemmed Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
title_short Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
title_sort coherent epitaxy of trilayer nickelate nd0 8sr0 2 4ni3o10 films by high pressure magnetron sputtering
url http://dx.doi.org/10.1063/5.0064201
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