Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer
Abstract Thermoelectricity is a well-known effect that can be used to convert heat energy into electrical energy. However, the yield of this conversion is still low compared to current photovoltaic technology. It is limited by the intrinsic properties of materials, leading to intensive materials sci...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-10-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-43843-y |
| _version_ | 1797559593305374720 |
|---|---|
| author | Alain Portavoce Siham Hassak Maxime Bertoglio |
| author_facet | Alain Portavoce Siham Hassak Maxime Bertoglio |
| author_sort | Alain Portavoce |
| collection | DOAJ |
| description | Abstract Thermoelectricity is a well-known effect that can be used to convert heat energy into electrical energy. However, the yield of this conversion is still low compared to current photovoltaic technology. It is limited by the intrinsic properties of materials, leading to intensive materials science investigations for the design of efficient thermoelectric (TE) materials. Interface engineering was shown to be a valuable solution for improving materials’ TE properties, supporting the development of multiphase TE materials. In particular, interfaces have been suggested to promote the increase of the Seebeck coefficient of materials without significantly impacting their electrical conductivity through the so-called energy filtering effect. This work aims at determining experimentally the effect of a metal/semiconductor interface exhibiting an ohmic character on the effective Seebeck coefficient of multiphase materials, focusing on the n-type Mn5Ge3/p-type Ge interface. This interface is shown not to contribute to carrier transport, but to contribute to carrier concentration filtering due to carrier injection or recombination. The Seebeck coefficient of the bi-phase material is shown to be dependent on the direction carriers are crossing the interface. The interface effect mainly results from a modification of charge carrier concentrations in the semiconductor. |
| first_indexed | 2024-03-10T17:47:32Z |
| format | Article |
| id | doaj.art-05c4c2b811234d4d87319f9893492eb0 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-10T17:47:32Z |
| publishDate | 2023-10-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-05c4c2b811234d4d87319f9893492eb02023-11-20T09:28:25ZengNature PortfolioScientific Reports2045-23222023-10-0113111010.1038/s41598-023-43843-yInfluence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayerAlain Portavoce0Siham Hassak1Maxime Bertoglio2IM2NP, Faculté des Sciences de Saint-Jérôme case 142, Aix-Marseille University/CNRSIM2NP, Faculté des Sciences de Saint-Jérôme case 142, Aix-Marseille University/CNRSIM2NP, Faculté des Sciences de Saint-Jérôme case 142, Aix-Marseille University/CNRSAbstract Thermoelectricity is a well-known effect that can be used to convert heat energy into electrical energy. However, the yield of this conversion is still low compared to current photovoltaic technology. It is limited by the intrinsic properties of materials, leading to intensive materials science investigations for the design of efficient thermoelectric (TE) materials. Interface engineering was shown to be a valuable solution for improving materials’ TE properties, supporting the development of multiphase TE materials. In particular, interfaces have been suggested to promote the increase of the Seebeck coefficient of materials without significantly impacting their electrical conductivity through the so-called energy filtering effect. This work aims at determining experimentally the effect of a metal/semiconductor interface exhibiting an ohmic character on the effective Seebeck coefficient of multiphase materials, focusing on the n-type Mn5Ge3/p-type Ge interface. This interface is shown not to contribute to carrier transport, but to contribute to carrier concentration filtering due to carrier injection or recombination. The Seebeck coefficient of the bi-phase material is shown to be dependent on the direction carriers are crossing the interface. The interface effect mainly results from a modification of charge carrier concentrations in the semiconductor.https://doi.org/10.1038/s41598-023-43843-y |
| spellingShingle | Alain Portavoce Siham Hassak Maxime Bertoglio Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer Scientific Reports |
| title | Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer |
| title_full | Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer |
| title_fullStr | Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer |
| title_full_unstemmed | Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer |
| title_short | Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer |
| title_sort | influence of the mn5ge3 ge ohmic contact interface on the seebeck coefficient of the mn5ge3 ge bilayer |
| url | https://doi.org/10.1038/s41598-023-43843-y |
| work_keys_str_mv | AT alainportavoce influenceofthemn5ge3geohmiccontactinterfaceontheseebeckcoefficientofthemn5ge3gebilayer AT sihamhassak influenceofthemn5ge3geohmiccontactinterfaceontheseebeckcoefficientofthemn5ge3gebilayer AT maximebertoglio influenceofthemn5ge3geohmiccontactinterfaceontheseebeckcoefficientofthemn5ge3gebilayer |