Theoretical Study of Spectral Responses of Heterojunctions Based on CuInSe2 and CuInS2
In this work we study the spectral responses of thin films solar cells of heterojunctions based on CuInSe2 and CuInS2. Four-layer structures are studied according to the n+n/pp+ model. First we consider the structure ZnO(n+ )/CdS(n)/CuInS2(p)/CuInSe2(p+) where CuInS2 represents the base and CuInSe...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Collaborating Academics IP
2020-08-01
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| Series: | Materials and Devices |
| Subjects: | |
| Online Access: | http://caip.co-ac.com/index.php/materialsanddevices/article/view/120 |
| _version_ | 1818720048606347264 |
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| author | Keita E.M. Ndiaye B. Dia M. Tabar Y. Sene C. Mbow B. |
| author_facet | Keita E.M. Ndiaye B. Dia M. Tabar Y. Sene C. Mbow B. |
| author_sort | Keita E.M. |
| collection | DOAJ |
| description | In this work we study the spectral responses of thin films solar cells of heterojunctions based on CuInSe2 and CuInS2.
Four-layer structures are studied according to the n+n/pp+ model. First we consider the structure ZnO(n+
)/CdS(n)/CuInS2(p)/CuInSe2(p+) where CuInS2 represents the base and CuInSe2 the substrate in this model. Secondly we
consider the structure ZnO(n+)/CdS(n)/CuInSe2(p)/CuInS2(p+
), for this model CuInSe2 represents the base and CuInS2 the
substrate. ZnO and CdS are used as window layers in each structure. Using the continuity equation that governs transport of carriers in semiconductor material, models for calculating spectral responses are proposed for heterojunctions type n+n/pp+ based on CuInSe2 and CuInS2. For each structure we have presented the energy band diagram based on the Anderson model [1] and
determined the expression of the photocurrent. The theoretical results obtained allow to compare the performances of these two models by optimizing the different parameters of each structure (base thickness, diffusion length, recombination velocity at the
interface, etc.) in order to improve the overall efficiency of the collection of carriers. |
| first_indexed | 2024-12-17T20:16:39Z |
| format | Article |
| id | doaj.art-05ca2b01b5424c73aed502f3bd773a2d |
| institution | Directory Open Access Journal |
| issn | 2495-3911 |
| language | English |
| last_indexed | 2024-12-17T20:16:39Z |
| publishDate | 2020-08-01 |
| publisher | Collaborating Academics IP |
| record_format | Article |
| series | Materials and Devices |
| spelling | doaj.art-05ca2b01b5424c73aed502f3bd773a2d2022-12-21T21:34:04ZengCollaborating Academics IPMaterials and Devices2495-39112020-08-01510508-10508-1510.23647/ca.md20200508Theoretical Study of Spectral Responses of Heterojunctions Based on CuInSe2 and CuInS2Keita E.M.0Ndiaye B.1Dia M.2Tabar Y.3Sene C.4Mbow B.5Laboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, SénégalLaboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, SénégalLaboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, SénégalLaboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, SénégalLaboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, SénégalLaboratoire des Semiconducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, SénégalIn this work we study the spectral responses of thin films solar cells of heterojunctions based on CuInSe2 and CuInS2. Four-layer structures are studied according to the n+n/pp+ model. First we consider the structure ZnO(n+ )/CdS(n)/CuInS2(p)/CuInSe2(p+) where CuInS2 represents the base and CuInSe2 the substrate in this model. Secondly we consider the structure ZnO(n+)/CdS(n)/CuInSe2(p)/CuInS2(p+ ), for this model CuInSe2 represents the base and CuInS2 the substrate. ZnO and CdS are used as window layers in each structure. Using the continuity equation that governs transport of carriers in semiconductor material, models for calculating spectral responses are proposed for heterojunctions type n+n/pp+ based on CuInSe2 and CuInS2. For each structure we have presented the energy band diagram based on the Anderson model [1] and determined the expression of the photocurrent. The theoretical results obtained allow to compare the performances of these two models by optimizing the different parameters of each structure (base thickness, diffusion length, recombination velocity at the interface, etc.) in order to improve the overall efficiency of the collection of carriers.http://caip.co-ac.com/index.php/materialsanddevices/article/view/120solar cellsheterojunctionsspectral responsesbase and substrate effectsphotovoltaicselectronic propertiesanderson modelcuinse2cuins2 |
| spellingShingle | Keita E.M. Ndiaye B. Dia M. Tabar Y. Sene C. Mbow B. Theoretical Study of Spectral Responses of Heterojunctions Based on CuInSe2 and CuInS2 Materials and Devices solar cells heterojunctions spectral responses base and substrate effects photovoltaics electronic properties anderson model cuinse2 cuins2 |
| title | Theoretical Study of Spectral Responses of Heterojunctions Based on CuInSe2 and CuInS2 |
| title_full | Theoretical Study of Spectral Responses of Heterojunctions Based on CuInSe2 and CuInS2 |
| title_fullStr | Theoretical Study of Spectral Responses of Heterojunctions Based on CuInSe2 and CuInS2 |
| title_full_unstemmed | Theoretical Study of Spectral Responses of Heterojunctions Based on CuInSe2 and CuInS2 |
| title_short | Theoretical Study of Spectral Responses of Heterojunctions Based on CuInSe2 and CuInS2 |
| title_sort | theoretical study of spectral responses of heterojunctions based on cuinse2 and cuins2 |
| topic | solar cells heterojunctions spectral responses base and substrate effects photovoltaics electronic properties anderson model cuinse2 cuins2 |
| url | http://caip.co-ac.com/index.php/materialsanddevices/article/view/120 |
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