Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method

In the paper, the properties of MaPbI3 films made with or without a precipitant have been investigated. The samples had a planar geometry based on ceramic substrates with interdigitated gold electrodes and also based on glass substrates. The samples were irradiated with green light from an LED sourc...

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Main Authors: Ovezov Maksat, Ryabko Andrey, Aleshin Andrey, Moshnikov Vyacheslav, Kondratyev Valeriy, Maximov Alexander
Format: Article
Language:English
Published: Peter the Great St.Petersburg Polytechnic University 2023-12-01
Series:St. Petersburg Polytechnical University Journal: Physics and Mathematics
Subjects:
Online Access:https://physmath.spbstu.ru/article/2023.70.01/
_version_ 1797343241393143808
author Ovezov Maksat
Ryabko Andrey
Aleshin Andrey
Moshnikov Vyacheslav
Kondratyev Valeriy
Maximov Alexander
author_facet Ovezov Maksat
Ryabko Andrey
Aleshin Andrey
Moshnikov Vyacheslav
Kondratyev Valeriy
Maximov Alexander
author_sort Ovezov Maksat
collection DOAJ
description In the paper, the properties of MaPbI3 films made with or without a precipitant have been investigated. The samples had a planar geometry based on ceramic substrates with interdigitated gold electrodes and also based on glass substrates. The samples were irradiated with green light from an LED source, and a special setup was used to measure current–voltage (I–V) characteristics. The polycrystalline films exhibited high sensitivity (an increase in current by about 2 orders upon irradiation). The width of their optical band gap was the same regardless of the use of the precipitant but the maximum trap-filling voltages turned out to be very sensitive to such use. According to optical microscopy, the film microstructure was characterized by a growth of large long dendritic structures, i. e., the nucleation occurred in the solution mass during the films’ making. This growth mechanism may be convenient for the use of MaPbI3 films in photodetectors.
first_indexed 2024-03-08T10:44:55Z
format Article
id doaj.art-05e0bdb13bc54e278e3c1c3ca1e5c5d5
institution Directory Open Access Journal
issn 2405-7223
language English
last_indexed 2024-03-08T10:44:55Z
publishDate 2023-12-01
publisher Peter the Great St.Petersburg Polytechnic University
record_format Article
series St. Petersburg Polytechnical University Journal: Physics and Mathematics
spelling doaj.art-05e0bdb13bc54e278e3c1c3ca1e5c5d52024-01-26T17:18:26ZengPeter the Great St.Petersburg Polytechnic UniversitySt. Petersburg Polytechnical University Journal: Physics and Mathematics2405-72232023-12-0116410.18721/JPM.1640120714726Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat methodOvezov Maksat0https://orcid.org/0009-0009-6273-1478Ryabko Andrey1https://orcid.org/0000-0001-9626-7612Aleshin Andrey2https://orcid.org/0000-0001-5449-4446Moshnikov Vyacheslav3https://orcid.org/0000-0001-6500-5492Kondratyev Valeriy4https://orcid.org/0000-0002-3469-5897Maximov Alexander5https://orcid.org/0000-0003-0195-8870Ioffe InstituteIoffe InstituteIoffe InstituteSt. Petersburg Electrotechnical University "LETI"Alferov UniversitySt. Petersburg Electrotechnical University "LETI"In the paper, the properties of MaPbI3 films made with or without a precipitant have been investigated. The samples had a planar geometry based on ceramic substrates with interdigitated gold electrodes and also based on glass substrates. The samples were irradiated with green light from an LED source, and a special setup was used to measure current–voltage (I–V) characteristics. The polycrystalline films exhibited high sensitivity (an increase in current by about 2 orders upon irradiation). The width of their optical band gap was the same regardless of the use of the precipitant but the maximum trap-filling voltages turned out to be very sensitive to such use. According to optical microscopy, the film microstructure was characterized by a growth of large long dendritic structures, i. e., the nucleation occurred in the solution mass during the films’ making. This growth mechanism may be convenient for the use of MaPbI3 films in photodetectors.https://physmath.spbstu.ru/article/2023.70.01/organometallic perovskitesemiconducting polymertransport mechanismsolar cell
spellingShingle Ovezov Maksat
Ryabko Andrey
Aleshin Andrey
Moshnikov Vyacheslav
Kondratyev Valeriy
Maximov Alexander
Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
St. Petersburg Polytechnical University Journal: Physics and Mathematics
organometallic perovskite
semiconducting polymer
transport mechanism
solar cell
title Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
title_full Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
title_fullStr Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
title_full_unstemmed Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
title_short Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
title_sort current voltage characteristics of mapbi3 perovskite films formed by the single stage spin coat method
topic organometallic perovskite
semiconducting polymer
transport mechanism
solar cell
url https://physmath.spbstu.ru/article/2023.70.01/
work_keys_str_mv AT ovezovmaksat currentvoltagecharacteristicsofmapbi3perovskitefilmsformedbythesinglestagespincoatmethod
AT ryabkoandrey currentvoltagecharacteristicsofmapbi3perovskitefilmsformedbythesinglestagespincoatmethod
AT aleshinandrey currentvoltagecharacteristicsofmapbi3perovskitefilmsformedbythesinglestagespincoatmethod
AT moshnikovvyacheslav currentvoltagecharacteristicsofmapbi3perovskitefilmsformedbythesinglestagespincoatmethod
AT kondratyevvaleriy currentvoltagecharacteristicsofmapbi3perovskitefilmsformedbythesinglestagespincoatmethod
AT maximovalexander currentvoltagecharacteristicsofmapbi3perovskitefilmsformedbythesinglestagespincoatmethod