Unraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1−yO3±δ thin films
Grain boundaries in Sr-doped LaMnO3±δ thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material. The unique behavior of the grain boundaries can be correlated with substantial modifications of the...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5054576 |
| _version_ | 1818244015117565952 |
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| author | Francesco Chiabrera Iñigo Garbayo Dolors Pla Mónica Burriel Fabrice Wilhelm Andrei Rogalev Marc Núñez Alex Morata Albert Tarancón |
| author_facet | Francesco Chiabrera Iñigo Garbayo Dolors Pla Mónica Burriel Fabrice Wilhelm Andrei Rogalev Marc Núñez Alex Morata Albert Tarancón |
| author_sort | Francesco Chiabrera |
| collection | DOAJ |
| description | Grain boundaries in Sr-doped LaMnO3±δ thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material. The unique behavior of the grain boundaries can be correlated with substantial modifications of the cation concentration at the interfaces, which can be tuned by changing the overall cationic ratio in the films. In this work, we study the electronic properties of La0.8Sr0.2Mn1−yO3±δ thin films with variable Mn content. The influence of the cationic composition on the grain boundary and grain bulk electronic properties is elucidated by studying the manganese valence state evolution using spectroscopy techniques and by confronting the electronic properties of epitaxial and polycrystalline films. Substantial differences in the electronic conduction mechanism are found in the presence of grain boundaries and depending on the manganese content. Moreover, the unique defect chemistry of the nanomaterial is elucidated by measuring the electrical resistance of the thin films as a function of oxygen partial pressure, disclosing the importance of the cationic local non-stoichiometry on the thin film behavior. |
| first_indexed | 2024-12-12T14:10:18Z |
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| id | doaj.art-05edf0f53043404f9025e42aadbb7b73 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-12T14:10:18Z |
| publishDate | 2019-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-05edf0f53043404f9025e42aadbb7b732022-12-22T00:22:06ZengAIP Publishing LLCAPL Materials2166-532X2019-01-0171013205013205-810.1063/1.5054576004993APMUnraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1−yO3±δ thin filmsFrancesco Chiabrera0Iñigo Garbayo1Dolors Pla2Mónica Burriel3Fabrice Wilhelm4Andrei Rogalev5Marc Núñez6Alex Morata7Albert Tarancón8Department of Advanced Materials for Energy, Catalonia Institute for Energy Research (IREC), Jardí de les Dones de Negre 1, Planta 2, 08930 Sant Adrià de Besòs, Barcelona, SpainDepartment of Advanced Materials for Energy, Catalonia Institute for Energy Research (IREC), Jardí de les Dones de Negre 1, Planta 2, 08930 Sant Adrià de Besòs, Barcelona, SpainUniv. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, FranceUniv. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, FranceEuropean Synchrotron Radiation Facility (ESRF), F-38054 Grenoble, FranceEuropean Synchrotron Radiation Facility (ESRF), F-38054 Grenoble, FranceDepartment of Advanced Materials for Energy, Catalonia Institute for Energy Research (IREC), Jardí de les Dones de Negre 1, Planta 2, 08930 Sant Adrià de Besòs, Barcelona, SpainDepartment of Advanced Materials for Energy, Catalonia Institute for Energy Research (IREC), Jardí de les Dones de Negre 1, Planta 2, 08930 Sant Adrià de Besòs, Barcelona, SpainDepartment of Advanced Materials for Energy, Catalonia Institute for Energy Research (IREC), Jardí de les Dones de Negre 1, Planta 2, 08930 Sant Adrià de Besòs, Barcelona, SpainGrain boundaries in Sr-doped LaMnO3±δ thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material. The unique behavior of the grain boundaries can be correlated with substantial modifications of the cation concentration at the interfaces, which can be tuned by changing the overall cationic ratio in the films. In this work, we study the electronic properties of La0.8Sr0.2Mn1−yO3±δ thin films with variable Mn content. The influence of the cationic composition on the grain boundary and grain bulk electronic properties is elucidated by studying the manganese valence state evolution using spectroscopy techniques and by confronting the electronic properties of epitaxial and polycrystalline films. Substantial differences in the electronic conduction mechanism are found in the presence of grain boundaries and depending on the manganese content. Moreover, the unique defect chemistry of the nanomaterial is elucidated by measuring the electrical resistance of the thin films as a function of oxygen partial pressure, disclosing the importance of the cationic local non-stoichiometry on the thin film behavior.http://dx.doi.org/10.1063/1.5054576 |
| spellingShingle | Francesco Chiabrera Iñigo Garbayo Dolors Pla Mónica Burriel Fabrice Wilhelm Andrei Rogalev Marc Núñez Alex Morata Albert Tarancón Unraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1−yO3±δ thin films APL Materials |
| title | Unraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1−yO3±δ thin films |
| title_full | Unraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1−yO3±δ thin films |
| title_fullStr | Unraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1−yO3±δ thin films |
| title_full_unstemmed | Unraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1−yO3±δ thin films |
| title_short | Unraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1−yO3±δ thin films |
| title_sort | unraveling bulk and grain boundary electrical properties in la0 8sr0 2mn1 yo3 δ thin films |
| url | http://dx.doi.org/10.1063/1.5054576 |
| work_keys_str_mv | AT francescochiabrera unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms AT inigogarbayo unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms AT dolorspla unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms AT monicaburriel unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms AT fabricewilhelm unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms AT andreirogalev unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms AT marcnunez unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms AT alexmorata unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms AT alberttarancon unravelingbulkandgrainboundaryelectricalpropertiesinla08sr02mn1yo3dthinfilms |