Moore-Gibson-Thompson theory of a non-local excited semiconductor medium with stability studies
The present study introduces a theoretical framework according to the Moore-Gibson-Thompson (MGT) Model in the context of generalized thermoelasticity theory. The excited semiconductor material is utilized to formulate the governing equations in one dimensional (1D) with a non-local parameter. Accor...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-12-01
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| Series: | Alexandria Engineering Journal |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S1110016822003556 |
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| author | Shreen El-Sapa Areej A. Almoneef Khaled Lotfy Alaa A. El-Bary Abdulkafi M. Saeed |
| author_facet | Shreen El-Sapa Areej A. Almoneef Khaled Lotfy Alaa A. El-Bary Abdulkafi M. Saeed |
| author_sort | Shreen El-Sapa |
| collection | DOAJ |
| description | The present study introduces a theoretical framework according to the Moore-Gibson-Thompson (MGT) Model in the context of generalized thermoelasticity theory. The excited semiconductor material is utilized to formulate the governing equations in one dimensional (1D) with a non-local parameter. According to the photo- thermoelasticity theory, the overlapping between the electronic (optical) deformation and elastic deformation is taken into account. During the photo-excitation processes, the non-local equation of motion and the heat equation is introduced according to the model of Moore-Gibson-Thompson (MGT). The novel model describes the interaction between plasma and thermomechanical waves in a non-dimensional form. Laplace transform for time variable is applied to convert the governing equations into system of ordinary differential equations. The vector-matrix differential equation with the eigenvalues approach method is employed to obtain the solutions of the physical quantities analytically. Laplace transform invers numerically is utilized when some boundary conditions are applied at the semiconductor free surface to obtain the complete general of the main physical quantities. The numerical computations for the input parameters of Silicon as semiconductor material are used to illustrate the obtained results graphically and discussed. |
| first_indexed | 2024-04-11T05:27:46Z |
| format | Article |
| id | doaj.art-062da484f8e24817b2eae8bf8328d1f9 |
| institution | Directory Open Access Journal |
| issn | 1110-0168 |
| language | English |
| last_indexed | 2024-04-11T05:27:46Z |
| publishDate | 2022-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Alexandria Engineering Journal |
| spelling | doaj.art-062da484f8e24817b2eae8bf8328d1f92022-12-23T04:39:14ZengElsevierAlexandria Engineering Journal1110-01682022-12-0161121175311764Moore-Gibson-Thompson theory of a non-local excited semiconductor medium with stability studiesShreen El-Sapa0Areej A. Almoneef1Khaled Lotfy2Alaa A. El-Bary3Abdulkafi M. Saeed4Department of Mathematical Sciences, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi ArabiaDepartment of Mathematical Sciences, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi ArabiaDepartment of Mathematics, Faculty of Science, Zagazig University, P.O. Box 44519, Zagazig, Egypt; Department of Mathematics, Faculty of Science, Taibah University, Madinah, Saudi Arabia; Corresponding author.Basic and Applied Science Institute, Arab Academy for Science, Technology and Maritime Transport, P.O. Box 1029, Alexandria, Egypt; National Committee for Mathematics, Academy of Scientific Research and Technology, Egypt; Council of future studies and risk management, Academy of Scientific Research and Technology, EgyptDepartment of Mathematics, College of Science, Qassim University, P.O. Box 6644, Buraydah 51452, Saudi ArabiaThe present study introduces a theoretical framework according to the Moore-Gibson-Thompson (MGT) Model in the context of generalized thermoelasticity theory. The excited semiconductor material is utilized to formulate the governing equations in one dimensional (1D) with a non-local parameter. According to the photo- thermoelasticity theory, the overlapping between the electronic (optical) deformation and elastic deformation is taken into account. During the photo-excitation processes, the non-local equation of motion and the heat equation is introduced according to the model of Moore-Gibson-Thompson (MGT). The novel model describes the interaction between plasma and thermomechanical waves in a non-dimensional form. Laplace transform for time variable is applied to convert the governing equations into system of ordinary differential equations. The vector-matrix differential equation with the eigenvalues approach method is employed to obtain the solutions of the physical quantities analytically. Laplace transform invers numerically is utilized when some boundary conditions are applied at the semiconductor free surface to obtain the complete general of the main physical quantities. The numerical computations for the input parameters of Silicon as semiconductor material are used to illustrate the obtained results graphically and discussed.http://www.sciencedirect.com/science/article/pii/S1110016822003556Non-localMoore-Gibson-Thompson modelPlasma excitationSiliconEigenvalues approachThermoelastic effects |
| spellingShingle | Shreen El-Sapa Areej A. Almoneef Khaled Lotfy Alaa A. El-Bary Abdulkafi M. Saeed Moore-Gibson-Thompson theory of a non-local excited semiconductor medium with stability studies Alexandria Engineering Journal Non-local Moore-Gibson-Thompson model Plasma excitation Silicon Eigenvalues approach Thermoelastic effects |
| title | Moore-Gibson-Thompson theory of a non-local excited semiconductor medium with stability studies |
| title_full | Moore-Gibson-Thompson theory of a non-local excited semiconductor medium with stability studies |
| title_fullStr | Moore-Gibson-Thompson theory of a non-local excited semiconductor medium with stability studies |
| title_full_unstemmed | Moore-Gibson-Thompson theory of a non-local excited semiconductor medium with stability studies |
| title_short | Moore-Gibson-Thompson theory of a non-local excited semiconductor medium with stability studies |
| title_sort | moore gibson thompson theory of a non local excited semiconductor medium with stability studies |
| topic | Non-local Moore-Gibson-Thompson model Plasma excitation Silicon Eigenvalues approach Thermoelastic effects |
| url | http://www.sciencedirect.com/science/article/pii/S1110016822003556 |
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