Influence of Gd<sub>2</sub>O<sub>3</sub> doping contents on conductivity of Ce<sub>1-<i>x</i></sub>Gd<sub><i>x</i></sub>O<sub>2-<i>δ</i></sub> electrolyte

Gd<sub>2</sub>O<sub>3</sub> doped CeO<sub>2</sub>(GDC) was widely used in solid oxide fuel cell (SOFC) because of its high ionic conductivity at 500-700 ℃. However, during the SOFC operation, Ce<sup>4+</sup> was reduced to Ce<sup>3+</sup> a...

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Bibliographic Details
Main Authors: LIU Yuan-yuan, LI Shu-ting, PENG Jun, AN Sheng-li
Format: Article
Language:zho
Published: Journal of Materials Engineering 2020-06-01
Series:Cailiao gongcheng
Subjects:
Online Access:http://jme.biam.ac.cn/CN/Y2020/V48/I6/118
Description
Summary:Gd<sub>2</sub>O<sub>3</sub> doped CeO<sub>2</sub>(GDC) was widely used in solid oxide fuel cell (SOFC) because of its high ionic conductivity at 500-700 ℃. However, during the SOFC operation, Ce<sup>4+</sup> was reduced to Ce<sup>3+</sup> at the anode side of the battery, resulting in electronic leakage, which leaded to the degradation of SOFC battery performance. The Ce<sub>1-<i>x</i></sub>Gd<sub><i>x</i></sub>O<sub>2-δ</sub>(<i>x</i>=0.05,0.10,0.15,0.20,0.25, mole fraction) solid electrolyte was prepared by sol-gel method. The effects of different Gd<sup>3+</sup> doping amount on the total conductivity and electronic conductivity of GDC electrolyte were studied, and the relationships between the total conductivity, electronic conductivity, and temperature, oxygen partial pressure were analyzed. The results show that, when the Gd<sub>2</sub>O<sub>3</sub> doping content is 0.20, the total conductivity of GDC reaches the highest 8.59&#215;10<sup>-2</sup> S&#183;cm<sup>-1</sup> at 750 ℃. The electronic conductivity decreases with the increase of Gd<sup>3+</sup>doping amount, and reaches the highest 6.47&#215;10<sup>-4</sup> S&#183;cm<sup>-1</sup> at 750 ℃ when Gd<sup>3+</sup>doping amount is 0.10. The GDC with doping amount of 0.20 highlights the highestionic conductivity because of its highest total conductivity and smaller electronic conductivity.
ISSN:1001-4381
1001-4381