Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection

Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon n...

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Main Authors: P. Pignalosa, H. Lee, L. Qiao, M. Tseng, Y. Yi
Format: Article
Language:English
Published: AIP Publishing LLC 2011-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.3624838
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author P. Pignalosa
H. Lee
L. Qiao
M. Tseng
Y. Yi
author_facet P. Pignalosa
H. Lee
L. Qiao
M. Tseng
Y. Yi
author_sort P. Pignalosa
collection DOAJ
description Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60º) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.
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spelling doaj.art-06527dcd8d6c4aeeb058357ee58f85702022-12-21T21:43:29ZengAIP Publishing LLCAIP Advances2158-32262011-09-0113032124032124-610.1063/1.3624838024103ADVGraded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflectionP. Pignalosa0H. Lee1L. Qiao2M. Tseng3Y. Yi4New York University, New York, NY, USABeijing University of Science and Technology, Beijing 100083, ChinaBeijing University of Science and Technology, Beijing 100083, ChinaInstitute of Electro-Optical Engineering (IEO), NCTU, Taiwan 300, TaiwanNew York University, New York, NY, USAAntireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60º) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.http://dx.doi.org/10.1063/1.3624838
spellingShingle P. Pignalosa
H. Lee
L. Qiao
M. Tseng
Y. Yi
Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection
AIP Advances
title Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection
title_full Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection
title_fullStr Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection
title_full_unstemmed Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection
title_short Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection
title_sort graded index and randomly oriented core shell silicon nanowires for broadband and wide angle antireflection
url http://dx.doi.org/10.1063/1.3624838
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