Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films
AbstractWe report the growth and characterization of Fe-Ga thin films. These films were RF sputtered onto Si, MgO and quartz substrates by controlling the parameters such as the deposition time, power and substrate temperature. The deposited films were characterized using X-Ray Diffraction, Atomic F...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2015-10-01
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| Series: | Materials Research |
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| Online Access: | http://www.scielo.br/pdf/mr/v18n5/1516-1439-mr-18-5-946.pdf |
| _version_ | 1798013771051958272 |
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| author | Lalitha Raveendran Nivedita Valiveti Venkata Siva Kumar Kandasami Asokan Ramasamy Thangavelu Rajendrakumar |
| author_facet | Lalitha Raveendran Nivedita Valiveti Venkata Siva Kumar Kandasami Asokan Ramasamy Thangavelu Rajendrakumar |
| author_sort | Lalitha Raveendran Nivedita |
| collection | DOAJ |
| description | AbstractWe report the growth and characterization of Fe-Ga thin films. These films were RF sputtered onto Si, MgO and quartz substrates by controlling the parameters such as the deposition time, power and substrate temperature. The deposited films were characterized using X-Ray Diffraction, Atomic Force Microscopy and Vibration Sample Magnetometry measurements. The effect of substrates on the structure and magnetic properties were studied. XRD pattern of the deposited films showed the formation of DO3 phase with L12 ordered structure at higher sputtering power. The room temperature deposited films demonstrated higher magnetization (0.08 emu/g) as compared to higher substrate temperature (300 °C) deposited films. The Mr/Ms ratio was found to be 0.037 for films deposited at room temperature and 0.009 for the substrate temperature 300 °C. L12 order was observed in films deposited on MgO and Quartz substrates. Magnetization was also found to be high (Ms out of plane = 518 emu/cm3, Ms in plane = 707 emu/cm3) for films deposited on MgO substrate. |
| first_indexed | 2024-04-11T15:06:48Z |
| format | Article |
| id | doaj.art-06558b6cb2f8438aa34b57162a008a2f |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-04-11T15:06:48Z |
| publishDate | 2015-10-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-06558b6cb2f8438aa34b57162a008a2f2022-12-22T04:16:46ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392015-10-0118594695210.1590/1516-1439.349014Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin FilmsLalitha Raveendran NiveditaValiveti Venkata Siva KumarKandasami AsokanRamasamy Thangavelu RajendrakumarAbstractWe report the growth and characterization of Fe-Ga thin films. These films were RF sputtered onto Si, MgO and quartz substrates by controlling the parameters such as the deposition time, power and substrate temperature. The deposited films were characterized using X-Ray Diffraction, Atomic Force Microscopy and Vibration Sample Magnetometry measurements. The effect of substrates on the structure and magnetic properties were studied. XRD pattern of the deposited films showed the formation of DO3 phase with L12 ordered structure at higher sputtering power. The room temperature deposited films demonstrated higher magnetization (0.08 emu/g) as compared to higher substrate temperature (300 °C) deposited films. The Mr/Ms ratio was found to be 0.037 for films deposited at room temperature and 0.009 for the substrate temperature 300 °C. L12 order was observed in films deposited on MgO and Quartz substrates. Magnetization was also found to be high (Ms out of plane = 518 emu/cm3, Ms in plane = 707 emu/cm3) for films deposited on MgO substrate.http://www.scielo.br/pdf/mr/v18n5/1516-1439-mr-18-5-946.pdfFe-Ga thin filmsRF sputteringannealingin plane magnetizationout plane magnetizationlattice rearrangement |
| spellingShingle | Lalitha Raveendran Nivedita Valiveti Venkata Siva Kumar Kandasami Asokan Ramasamy Thangavelu Rajendrakumar Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films Materials Research Fe-Ga thin films RF sputtering annealing in plane magnetization out plane magnetization lattice rearrangement |
| title | Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films |
| title_full | Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films |
| title_fullStr | Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films |
| title_full_unstemmed | Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films |
| title_short | Growth and Magnetic Properties of RF Sputtered Fe-Ga Thin Films |
| title_sort | growth and magnetic properties of rf sputtered fe ga thin films |
| topic | Fe-Ga thin films RF sputtering annealing in plane magnetization out plane magnetization lattice rearrangement |
| url | http://www.scielo.br/pdf/mr/v18n5/1516-1439-mr-18-5-946.pdf |
| work_keys_str_mv | AT lalitharaveendrannivedita growthandmagneticpropertiesofrfsputteredfegathinfilms AT valivetivenkatasivakumar growthandmagneticpropertiesofrfsputteredfegathinfilms AT kandasamiasokan growthandmagneticpropertiesofrfsputteredfegathinfilms AT ramasamythangavelurajendrakumar growthandmagneticpropertiesofrfsputteredfegathinfilms |