The chemical capacitance as a fingerprint of defect chemistry in mixed conducting oxides
The oxygen stoichiometry of mixed conducting oxides depends on the oxygen chemical potential and thus on the oxygen partial pressure in the gas phase. Also voltages may change the local oxygen stoichiometry and the amount to which such changes take place is quantified by the chemical capacitance of...
| Päätekijät: | , , , , , , , , |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | English |
| Julkaistu: |
Slovenian Chemical Society
2016-05-01
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| Sarja: | Acta Chimica Slovenica |
| Aiheet: | |
| Linkit: | https://journals.matheo.si/index.php/ACSi/article/view/2302 |