Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering
Heterogeneous integration of two-dimensional materials and the conventional semiconductor has opened opportunities for next-generation semiconductor devices and their processing. Heterogeneous integration has been studied for economical manufacturing by substrate recycling and novel functionalities...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0187351 |
| _version_ | 1797227535675686912 |
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| author | Yeonjoo Lee Towfiq Ahmed Xuejing Wang Michael T. Pettes Yeonhoo Kim Jeongwon Park Woo Seok Yang Kibum Kang Young Joon Hong Soyeong Kwon Jinkyoung Yoo |
| author_facet | Yeonjoo Lee Towfiq Ahmed Xuejing Wang Michael T. Pettes Yeonhoo Kim Jeongwon Park Woo Seok Yang Kibum Kang Young Joon Hong Soyeong Kwon Jinkyoung Yoo |
| author_sort | Yeonjoo Lee |
| collection | DOAJ |
| description | Heterogeneous integration of two-dimensional materials and the conventional semiconductor has opened opportunities for next-generation semiconductor devices and their processing. Heterogeneous integration has been studied for economical manufacturing by substrate recycling and novel functionalities by a combination of incommensurate materials. However, utilizing the integration requires controlling locations of the integrated architectures. Here, we show area-selective deposition (ASD) of germanium on the graphene/MoS2 stack. Ge nucleation precisely occurred on the surfaces of the patterned graphene/MoS2 stack via dipole engineering. In this study, the growth temperature of ASD of Ge was significantly lower than that based on precursor desorption on SiO2. The first-principles calculations revealed that Ge deposited by ASD on the graphene/MoS2 stack was not affected by charge transfer. This work provides a viable way to utilize atomically thin materials for next-generation semiconductor devices, which can be applicable for “Beyond Moore” and “More Moore” approaches. |
| first_indexed | 2024-04-24T14:42:21Z |
| format | Article |
| id | doaj.art-067baf2451e9441fbb489a47b52c4071 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-24T14:42:21Z |
| publishDate | 2024-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-067baf2451e9441fbb489a47b52c40712024-04-02T20:37:17ZengAIP Publishing LLCAPL Materials2166-532X2024-03-01123031103031103-710.1063/5.0187351Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineeringYeonjoo Lee0Towfiq Ahmed1Xuejing Wang2Michael T. Pettes3Yeonhoo Kim4Jeongwon Park5Woo Seok Yang6Kibum Kang7Young Joon Hong8Soyeong Kwon9Jinkyoung Yoo10Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USANational Security Directorate,Pacific Northwest National Laboratory, Richland, Washington 99354, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USAInterdisciplinary Materials Measurement Institute,Korea Research Institute of Standards and Science, Daejeon 34133, Republic of KoreaDepartment of Materials Science and Engineering,Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of KoreaElectronic Material and Device Research Center,Korea Electronics Technology Institute, Seongnam, Gyeonggi-do 13509, Republic of KoreaDepartment of Materials Science and Engineering,Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of KoreaDepartment of Nanotechnology and Advanced Materials Engineering,Sejong University, Seoul 05006, Republic of KoreaDepartment of Mechanical and Aerospace Engineering,University of California Irvine, Irvine, California 92697, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USAHeterogeneous integration of two-dimensional materials and the conventional semiconductor has opened opportunities for next-generation semiconductor devices and their processing. Heterogeneous integration has been studied for economical manufacturing by substrate recycling and novel functionalities by a combination of incommensurate materials. However, utilizing the integration requires controlling locations of the integrated architectures. Here, we show area-selective deposition (ASD) of germanium on the graphene/MoS2 stack. Ge nucleation precisely occurred on the surfaces of the patterned graphene/MoS2 stack via dipole engineering. In this study, the growth temperature of ASD of Ge was significantly lower than that based on precursor desorption on SiO2. The first-principles calculations revealed that Ge deposited by ASD on the graphene/MoS2 stack was not affected by charge transfer. This work provides a viable way to utilize atomically thin materials for next-generation semiconductor devices, which can be applicable for “Beyond Moore” and “More Moore” approaches.http://dx.doi.org/10.1063/5.0187351 |
| spellingShingle | Yeonjoo Lee Towfiq Ahmed Xuejing Wang Michael T. Pettes Yeonhoo Kim Jeongwon Park Woo Seok Yang Kibum Kang Young Joon Hong Soyeong Kwon Jinkyoung Yoo Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering APL Materials |
| title | Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering |
| title_full | Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering |
| title_fullStr | Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering |
| title_full_unstemmed | Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering |
| title_short | Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering |
| title_sort | area selective deposition of germanium on patterned graphene monolayer molybdenum disulfide stacks via dipole engineering |
| url | http://dx.doi.org/10.1063/5.0187351 |
| work_keys_str_mv | AT yeonjoolee areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT towfiqahmed areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT xuejingwang areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT michaeltpettes areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT yeonhookim areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT jeongwonpark areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT wooseokyang areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT kibumkang areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT youngjoonhong areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT soyeongkwon areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering AT jinkyoungyoo areaselectivedepositionofgermaniumonpatternedgraphenemonolayermolybdenumdisulfidestacksviadipoleengineering |