Parametric oscillation and amplification with gate controlled capacitor-within-capacitor

Abstract Parametric oscillators and parametric amplifiers are known for their ‘quiet’ operation and find new applications in quantum circuitry. A Capacitor-within-Capacitor (CWC) is a nested electronic element that has two components: the cell (e.g., the outer capacitor) and the gate (e.g., the inne...

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Main Author: H. Grebel
Format: Article
Language:English
Published: Springer 2021-05-01
Series:SN Applied Sciences
Subjects:
Online Access:https://doi.org/10.1007/s42452-021-04665-7
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author H. Grebel
author_facet H. Grebel
author_sort H. Grebel
collection DOAJ
description Abstract Parametric oscillators and parametric amplifiers are known for their ‘quiet’ operation and find new applications in quantum circuitry. A Capacitor-within-Capacitor (CWC) is a nested electronic element that has two components: the cell (e.g., the outer capacitor) and the gate (e.g., the inner capacitor). Here we provide analysis and experiments on diode-interfaced, CWC that exhibit parametric oscillations and parametric amplifications. By replacing the diode with a doped nano-graphene junction, we demonstrated a new structure whose doping may be electronically and chemically controlled. Advantages of these elements are in their simplicity, large relative capacitance change (of the order of 50%), separation of pump and signal channels and possibility for large integration.
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spelling doaj.art-069a50cb82e5413487615a6c05e0f4e72022-12-21T21:29:30ZengSpringerSN Applied Sciences2523-39632523-39712021-05-013611010.1007/s42452-021-04665-7Parametric oscillation and amplification with gate controlled capacitor-within-capacitorH. Grebel0Electronic Imaging Center, NJITAbstract Parametric oscillators and parametric amplifiers are known for their ‘quiet’ operation and find new applications in quantum circuitry. A Capacitor-within-Capacitor (CWC) is a nested electronic element that has two components: the cell (e.g., the outer capacitor) and the gate (e.g., the inner capacitor). Here we provide analysis and experiments on diode-interfaced, CWC that exhibit parametric oscillations and parametric amplifications. By replacing the diode with a doped nano-graphene junction, we demonstrated a new structure whose doping may be electronically and chemically controlled. Advantages of these elements are in their simplicity, large relative capacitance change (of the order of 50%), separation of pump and signal channels and possibility for large integration.https://doi.org/10.1007/s42452-021-04665-7Parametric OscillationParametric AmplificationGraphene junctionsCapacitor within- Capacitor
spellingShingle H. Grebel
Parametric oscillation and amplification with gate controlled capacitor-within-capacitor
SN Applied Sciences
Parametric Oscillation
Parametric Amplification
Graphene junctions
Capacitor within- Capacitor
title Parametric oscillation and amplification with gate controlled capacitor-within-capacitor
title_full Parametric oscillation and amplification with gate controlled capacitor-within-capacitor
title_fullStr Parametric oscillation and amplification with gate controlled capacitor-within-capacitor
title_full_unstemmed Parametric oscillation and amplification with gate controlled capacitor-within-capacitor
title_short Parametric oscillation and amplification with gate controlled capacitor-within-capacitor
title_sort parametric oscillation and amplification with gate controlled capacitor within capacitor
topic Parametric Oscillation
Parametric Amplification
Graphene junctions
Capacitor within- Capacitor
url https://doi.org/10.1007/s42452-021-04665-7
work_keys_str_mv AT hgrebel parametricoscillationandamplificationwithgatecontrolledcapacitorwithincapacitor