A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon
Abstract In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2021-02-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-021-03499-x |
| _version_ | 1797721547537907712 |
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| author | Guanyu Mi Jian Lv Longcheng Que Yi Zhang Yun Zhou Zhongyuan Liu |
| author_facet | Guanyu Mi Jian Lv Longcheng Que Yi Zhang Yun Zhou Zhongyuan Liu |
| author_sort | Guanyu Mi |
| collection | DOAJ |
| description | Abstract In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the average absorptivity of 400–2200 nm band before annealing is 96.81%, and the absorptivity maintains at 81.28% after annealing at 600 degrees. Meanwhile, black silicon prepared under the new technology is used in double four-quadrant photodetector, the results show that, at a reversed bias of 50 V, the average unit responsiveness is 0.528 A/W at 1060 nm and 0.102 A/W at 1180 nm, and the average dark current is 2 nA at inner quadrants and 8 nA at outer quadrants. The dual four-quadrant photodetector based on near-infrared enhanced black silicon has the advantages of high responsiveness, low dark current, fast response and low crosstalk, hence it is appropriate for a series of direction of applications, such as night vision detection and medical field. |
| first_indexed | 2024-03-12T09:34:44Z |
| format | Article |
| id | doaj.art-06a969cc455d4427bd785062617043bc |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:34:44Z |
| publishDate | 2021-02-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-06a969cc455d4427bd785062617043bc2023-09-02T13:41:46ZengSpringerOpenNanoscale Research Letters1556-276X2021-02-0116111010.1186/s11671-021-03499-xA Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black SiliconGuanyu Mi0Jian Lv1Longcheng Que2Yi Zhang3Yun Zhou4Zhongyuan Liu5State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of ChinaChina Electronics Technology Group Corporation, Chongqing Acoustic Optic Electronic CO.,LTAbstract In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the average absorptivity of 400–2200 nm band before annealing is 96.81%, and the absorptivity maintains at 81.28% after annealing at 600 degrees. Meanwhile, black silicon prepared under the new technology is used in double four-quadrant photodetector, the results show that, at a reversed bias of 50 V, the average unit responsiveness is 0.528 A/W at 1060 nm and 0.102 A/W at 1180 nm, and the average dark current is 2 nA at inner quadrants and 8 nA at outer quadrants. The dual four-quadrant photodetector based on near-infrared enhanced black silicon has the advantages of high responsiveness, low dark current, fast response and low crosstalk, hence it is appropriate for a series of direction of applications, such as night vision detection and medical field.https://doi.org/10.1186/s11671-021-03499-xBlack siliconNear infrared enhancedDual four-quadrantPhotodetector |
| spellingShingle | Guanyu Mi Jian Lv Longcheng Que Yi Zhang Yun Zhou Zhongyuan Liu A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon Nanoscale Research Letters Black silicon Near infrared enhanced Dual four-quadrant Photodetector |
| title | A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon |
| title_full | A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon |
| title_fullStr | A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon |
| title_full_unstemmed | A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon |
| title_short | A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon |
| title_sort | dual four quadrant photodetector based on near infrared enhanced nanometer black silicon |
| topic | Black silicon Near infrared enhanced Dual four-quadrant Photodetector |
| url | https://doi.org/10.1186/s11671-021-03499-x |
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