Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial res...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/21/22/7566 |
| _version_ | 1797508487306018816 |
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| author | Kaitlin M. Anagnost Eldred Lee Zhehui Wang Jifeng Liu Eric R. Fossum |
| author_facet | Kaitlin M. Anagnost Eldred Lee Zhehui Wang Jifeng Liu Eric R. Fossum |
| author_sort | Kaitlin M. Anagnost |
| collection | DOAJ |
| description | Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection. |
| first_indexed | 2024-03-10T05:04:40Z |
| format | Article |
| id | doaj.art-06ea42cec4f443198a2e42637f2dfa43 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T05:04:40Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-06ea42cec4f443198a2e42637f2dfa432023-11-23T01:25:46ZengMDPI AGSensors1424-82202021-11-012122756610.3390/s21227566Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion LayerKaitlin M. Anagnost0Eldred Lee1Zhehui Wang2Jifeng Liu3Eric R. Fossum4Thayer School of Engineering at Dartmouth, Dartmouth College, Hanover, NH 03755, USAThayer School of Engineering at Dartmouth, Dartmouth College, Hanover, NH 03755, USALos Alamos National Laboratory, Los Alamos, NM 87545, USAThayer School of Engineering at Dartmouth, Dartmouth College, Hanover, NH 03755, USAThayer School of Engineering at Dartmouth, Dartmouth College, Hanover, NH 03755, USASimulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection.https://www.mdpi.com/1424-8220/21/22/7566X-ray detectiondirect detectionindirect detectionimage sensorscintillator |
| spellingShingle | Kaitlin M. Anagnost Eldred Lee Zhehui Wang Jifeng Liu Eric R. Fossum Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer Sensors X-ray detection direct detection indirect detection image sensor scintillator |
| title | Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
| title_full | Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
| title_fullStr | Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
| title_full_unstemmed | Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
| title_short | Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer |
| title_sort | simulating 50 kev x ray photon detection in silicon with a down conversion layer |
| topic | X-ray detection direct detection indirect detection image sensor scintillator |
| url | https://www.mdpi.com/1424-8220/21/22/7566 |
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