Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire
In this work, the influence of an external electric field is studied in two cases: one-phonon resonant Raman scattering and one-phonon electron Raman scattering, processes that occur in a semiconductor quantum wire with cylindrical symmetry and finite potential barriers. Where we have considered tha...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2023-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ad086e |
| _version_ | 1797555024403890176 |
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| author | Re Betancourt-Riera Ri Betancourt-Riera L A Ferrer-Moreno Maricela Fernandez Lozada R Riera |
| author_facet | Re Betancourt-Riera Ri Betancourt-Riera L A Ferrer-Moreno Maricela Fernandez Lozada R Riera |
| author_sort | Re Betancourt-Riera |
| collection | DOAJ |
| description | In this work, the influence of an external electric field is studied in two cases: one-phonon resonant Raman scattering and one-phonon electron Raman scattering, processes that occur in a semiconductor quantum wire with cylindrical symmetry and finite potential barriers. Where we have considered that the electric field is homogeneous and transversal to the system axis. To carry out this study, we obtain a mathematical expression for the differential cross-section for both Raman processes, where for one-phonon resonant Raman scattering, intra-band and inter-band optical transitions are considered, while for one-phonon electron Raman scattering, only intra-band optical transitions are considered. Therefore, to determine the electronic states, we use a valid model when the electric field is weak with respect to confinement. In the case of the Fröhlich electron–phonon interaction, we use a model in which the oscillation modes are completely confined, a model that was developed within the framework of a macroscopic continuum model. Then, the singularities present in the Raman spectra and the effect of the electric field on their position and intensity are analyzed. Finally, how the electric field affects the electron–phonon interaction and the selection rules for optical transitions in a semiconductor quantum wire with cylindrical symmetry are shown. |
| first_indexed | 2024-03-10T16:41:25Z |
| format | Article |
| id | doaj.art-0710b70197214865b8436319efe7a12d |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-10T16:41:25Z |
| publishDate | 2023-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-0710b70197214865b8436319efe7a12d2023-11-20T11:58:45ZengIOP PublishingMaterials Research Express2053-15912023-01-01101111500510.1088/2053-1591/ad086eEffects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wireRe Betancourt-Riera0https://orcid.org/0000-0002-2117-7273Ri Betancourt-Riera1https://orcid.org/0000-0003-4643-7518L A Ferrer-Moreno2https://orcid.org/0000-0003-1804-8734Maricela Fernandez Lozada3https://orcid.org/0009-0004-3806-5712R Riera4https://orcid.org/0000-0003-3164-2009Tecnológico Nacional de México/Instituto Tecnológico de Hermosillo, Avenida Tecnológico S/N, Col. Sahuaro, C.P. 83170, Hermosillo, Sonora, MexicoTecnológico Nacional de México/Instituto Tecnológico de Hermosillo, Avenida Tecnológico S/N, Col. Sahuaro, C.P. 83170, Hermosillo, Sonora, MexicoTecnológico Nacional de México/Instituto Tecnológico de Hermosillo, Avenida Tecnológico S/N, Col. Sahuaro, C.P. 83170, Hermosillo, Sonora, MexicoTecnológico Nacional de México/Instituto Tecnológico de Hermosillo, Avenida Tecnológico S/N, Col. Sahuaro, C.P. 83170, Hermosillo, Sonora, MexicoDepartamento de Investigación en Física, Universidad de Sonora, Apartado Postal 5-88, CP 83190, Hermosillo, Sonora, MexicoIn this work, the influence of an external electric field is studied in two cases: one-phonon resonant Raman scattering and one-phonon electron Raman scattering, processes that occur in a semiconductor quantum wire with cylindrical symmetry and finite potential barriers. Where we have considered that the electric field is homogeneous and transversal to the system axis. To carry out this study, we obtain a mathematical expression for the differential cross-section for both Raman processes, where for one-phonon resonant Raman scattering, intra-band and inter-band optical transitions are considered, while for one-phonon electron Raman scattering, only intra-band optical transitions are considered. Therefore, to determine the electronic states, we use a valid model when the electric field is weak with respect to confinement. In the case of the Fröhlich electron–phonon interaction, we use a model in which the oscillation modes are completely confined, a model that was developed within the framework of a macroscopic continuum model. Then, the singularities present in the Raman spectra and the effect of the electric field on their position and intensity are analyzed. Finally, how the electric field affects the electron–phonon interaction and the selection rules for optical transitions in a semiconductor quantum wire with cylindrical symmetry are shown.https://doi.org/10.1088/2053-1591/ad086eelectronic statesRaman scatteringquantum well wire |
| spellingShingle | Re Betancourt-Riera Ri Betancourt-Riera L A Ferrer-Moreno Maricela Fernandez Lozada R Riera Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire Materials Research Express electronic states Raman scattering quantum well wire |
| title | Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire |
| title_full | Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire |
| title_fullStr | Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire |
| title_full_unstemmed | Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire |
| title_short | Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire |
| title_sort | effects of an external electric field on one phonon resonant and electron raman scattering in a semiconductor quantum wire |
| topic | electronic states Raman scattering quantum well wire |
| url | https://doi.org/10.1088/2053-1591/ad086e |
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