Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows
Al<sub>z</sub>Ga<sub>1−z</sub>As layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with a pattern of alternating SiO<sub>2</sub> mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickne...
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MDPI AG
2023-07-01
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| Online Access: | https://www.mdpi.com/2227-7080/11/4/89 |
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| author | Viktor Shamakhov Sergey Slipchenko Dmitriy Nikolaev Ilya Soshnikov Alexander Smirnov Ilya Eliseyev Artyom Grishin Matvei Kondratov Artem Rizaev Nikita Pikhtin Peter Kop’ev |
| author_facet | Viktor Shamakhov Sergey Slipchenko Dmitriy Nikolaev Ilya Soshnikov Alexander Smirnov Ilya Eliseyev Artyom Grishin Matvei Kondratov Artem Rizaev Nikita Pikhtin Peter Kop’ev |
| author_sort | Viktor Shamakhov |
| collection | DOAJ |
| description | Al<sub>z</sub>Ga<sub>1−z</sub>As layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with a pattern of alternating SiO<sub>2</sub> mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickness profiles of Al<sub>z</sub>Ga<sub>1−z</sub>As layers that demonstrated the distribution of the growth rate and <i>z</i> in the window were experimentally studied. It was shown that the layer growth rate and the AlAs mole fraction increased continuously from the center to the edge of the window. It was experimentally shown that for a fixed growth time of 10 min, as <i>z</i> increased from 0 to 0.3, the layer thickness difference between the center of the window and the edge increased from 700 Å to 1100 Å, and the maximum change in <i>z</i> between the center of the window and the edge reached Δ<i>z</i> 0.016, respectively. Within the framework of the vapor -phase diffusion model, simulations of the spatial distribution of the layer thickness and <i>z</i> across the window were carried out. It was shown that the simulation results were in good agreement with the experimental results for the effective diffusion length <i>D</i>/<i>k</i>: Ga—85 µm, Al—50 µm. |
| first_indexed | 2024-03-10T23:32:15Z |
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| id | doaj.art-07162cfb80394cee9167b8acaec9e1e7 |
| institution | Directory Open Access Journal |
| issn | 2227-7080 |
| language | English |
| last_indexed | 2024-03-10T23:32:15Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Technologies |
| spelling | doaj.art-07162cfb80394cee9167b8acaec9e1e72023-11-19T03:13:16ZengMDPI AGTechnologies2227-70802023-07-011148910.3390/technologies11040089Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide WindowsViktor Shamakhov0Sergey Slipchenko1Dmitriy Nikolaev2Ilya Soshnikov3Alexander Smirnov4Ilya Eliseyev5Artyom Grishin6Matvei Kondratov7Artem Rizaev8Nikita Pikhtin9Peter Kop’ev10Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaIoffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, RussiaAl<sub>z</sub>Ga<sub>1−z</sub>As layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with a pattern of alternating SiO<sub>2</sub> mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickness profiles of Al<sub>z</sub>Ga<sub>1−z</sub>As layers that demonstrated the distribution of the growth rate and <i>z</i> in the window were experimentally studied. It was shown that the layer growth rate and the AlAs mole fraction increased continuously from the center to the edge of the window. It was experimentally shown that for a fixed growth time of 10 min, as <i>z</i> increased from 0 to 0.3, the layer thickness difference between the center of the window and the edge increased from 700 Å to 1100 Å, and the maximum change in <i>z</i> between the center of the window and the edge reached Δ<i>z</i> 0.016, respectively. Within the framework of the vapor -phase diffusion model, simulations of the spatial distribution of the layer thickness and <i>z</i> across the window were carried out. It was shown that the simulation results were in good agreement with the experimental results for the effective diffusion length <i>D</i>/<i>k</i>: Ga—85 µm, Al—50 µm.https://www.mdpi.com/2227-7080/11/4/89selective area epitaxymocvdAlGaAsphotoluminescenceprofilometry |
| spellingShingle | Viktor Shamakhov Sergey Slipchenko Dmitriy Nikolaev Ilya Soshnikov Alexander Smirnov Ilya Eliseyev Artyom Grishin Matvei Kondratov Artem Rizaev Nikita Pikhtin Peter Kop’ev Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows Technologies selective area epitaxy mocvd AlGaAs photoluminescence profilometry |
| title | Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows |
| title_full | Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows |
| title_fullStr | Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows |
| title_full_unstemmed | Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows |
| title_short | Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows |
| title_sort | features of metalorganic chemical vapor deposition selective area epitaxy of al sub z sub ga sub 1 z sub as 0 ≤ i z i ≤ 0 3 layers in arrays of ultrawide windows |
| topic | selective area epitaxy mocvd AlGaAs photoluminescence profilometry |
| url | https://www.mdpi.com/2227-7080/11/4/89 |
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