| Summary: | Abstract Spray‐coated crystalline InZnOx‐based semiconductors are investigated as a function of [In3+]:[Zn2+] and their performance as TFTs semiconducting channels. More precisely, it is demonstrated that optical, structural, and electron transport properties show a high degree of sensitivity to the films' stoichiometry; that is, the [In3+]:[Zn2+] atomic ratio that equally determines the amorphous or crystalline structure of the film. Yttrium co‐doping of InZnOx with [In3+]:[Zn2+] atomic ratio of 6:4 shows that the YInZnOx structure and the key TFT parameters can further be engineered and improved in terms of the on‐to‐off current modulation ratio and, most importantly, the field effect mobility. It is finally demonstrated that the latter is in excess of 52 cm2 V‐1 s‐1 by combining crystalline YInZnOx and spray‐coated MgO dielectrics. These results identify spray‐coated crystalline YInZnOx as a viable TFT semiconducting channel material with respect to enhanced electrical performance and processing requirements in terms of simplicity and cost.
|
|---|