Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

Abstract Spray‐coated crystalline InZnOx‐based semiconductors are investigated as a function of [In3+]:[Zn2+] and their performance as TFTs semiconducting channels. More precisely, it is demonstrated that optical, structural, and electron transport properties show a high degree of sensitivity to the...

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Bibliographic Details
Main Authors: Dimitrios Afouxenidis, Nathan R. Halcovitch, William I. Milne, Arokia Nathan, George Adamopoulos
Format: Article
Language:English
Published: Wiley-VCH 2020-04-01
Series:Advanced Electronic Materials
Subjects:
indium zinc oxide semiconductors
solution‐processed electronics
spray pyrolysis
thin film transistors
Online Access:https://doi.org/10.1002/aelm.201900976

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