Increasing Electrical Resistivity of P-Type BiFeO<sub>3</sub> Ceramics by Hydrogen Peroxide-Assisted Hydrothermal Synthesis
Bismuth ferrite (BiFeO<sub>3</sub>, BFO) is still widely investigated both because of the great diversity of its possible applications and from the perspective of intrinsic defect engineering in the perovskite structure. Defect control in BiFeO<sub>3</sub> semiconductors coul...
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2023-04-01
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| author | Cristian Casut Raul Bucur Daniel Ursu Iosif Malaescu Marinela Miclau |
| author_facet | Cristian Casut Raul Bucur Daniel Ursu Iosif Malaescu Marinela Miclau |
| author_sort | Cristian Casut |
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| description | Bismuth ferrite (BiFeO<sub>3</sub>, BFO) is still widely investigated both because of the great diversity of its possible applications and from the perspective of intrinsic defect engineering in the perovskite structure. Defect control in BiFeO<sub>3</sub> semiconductors could provide a key technology for overcoming undesirable limitations, namely, a strong leakage current, which is attributed to the presence of oxygen vacancies (<i>V<sub>O</sub></i>) and Bi vacancies (<i>V<sub>Bi</sub></i>). Our study proposes a hydrothermal method for the reduction of the concentration of <i>V<sub>Bi</sub></i> during the ceramic synthesis of BiFeO<sub>3</sub>.Using hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>) as part of the medium, <i>p-type</i> BiFeO<sub>3</sub> ceramics characterized by their low conductivity were obtained. Hydrogen peroxide acted as the electron donor in the perovskite structure, controlling <i>V<sub>Bi</sub></i> in the BiFeO<sub>3</sub> semiconductor, which caused the dielectric constant and loss to decrease along with the electrical resistivity. The reduction of Bi vacancies highlighted by a FT-IR and Mott—Schottky analysis has an expected contribution to the dielectric characteristic. A decrease in the dielectric constant (with approximately 40%) and loss (3 times) and an increase of the electrical resistivity (by 3 times) was achieved by the hydrogen peroxide-assisted hydrothermal synthesized BFO ceramics, as compared with the hydrothermal synthesized BFOs. |
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| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T04:47:14Z |
| publishDate | 2023-04-01 |
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| spelling | doaj.art-07279113c7884397a7d3e4149357bf6f2023-11-17T20:13:32ZengMDPI AGMaterials1996-19442023-04-01168313010.3390/ma16083130Increasing Electrical Resistivity of P-Type BiFeO<sub>3</sub> Ceramics by Hydrogen Peroxide-Assisted Hydrothermal SynthesisCristian Casut0Raul Bucur1Daniel Ursu2Iosif Malaescu3Marinela Miclau4National Institute for Research and Development in Electrochemistry and Condensed Matter, Plautius Andronescu Str., No. 1, 300224 Timisoara, RomaniaNational Institute for Research and Development in Electrochemistry and Condensed Matter, Plautius Andronescu Str., No. 1, 300224 Timisoara, RomaniaNational Institute for Research and Development in Electrochemistry and Condensed Matter, Plautius Andronescu Str., No. 1, 300224 Timisoara, RomaniaPhysics Faculty, West University of Timisoara, V. Pârvan Ave., No. 4, 300223 Timisoara, RomaniaNational Institute for Research and Development in Electrochemistry and Condensed Matter, Plautius Andronescu Str., No. 1, 300224 Timisoara, RomaniaBismuth ferrite (BiFeO<sub>3</sub>, BFO) is still widely investigated both because of the great diversity of its possible applications and from the perspective of intrinsic defect engineering in the perovskite structure. Defect control in BiFeO<sub>3</sub> semiconductors could provide a key technology for overcoming undesirable limitations, namely, a strong leakage current, which is attributed to the presence of oxygen vacancies (<i>V<sub>O</sub></i>) and Bi vacancies (<i>V<sub>Bi</sub></i>). Our study proposes a hydrothermal method for the reduction of the concentration of <i>V<sub>Bi</sub></i> during the ceramic synthesis of BiFeO<sub>3</sub>.Using hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>) as part of the medium, <i>p-type</i> BiFeO<sub>3</sub> ceramics characterized by their low conductivity were obtained. Hydrogen peroxide acted as the electron donor in the perovskite structure, controlling <i>V<sub>Bi</sub></i> in the BiFeO<sub>3</sub> semiconductor, which caused the dielectric constant and loss to decrease along with the electrical resistivity. The reduction of Bi vacancies highlighted by a FT-IR and Mott—Schottky analysis has an expected contribution to the dielectric characteristic. A decrease in the dielectric constant (with approximately 40%) and loss (3 times) and an increase of the electrical resistivity (by 3 times) was achieved by the hydrogen peroxide-assisted hydrothermal synthesized BFO ceramics, as compared with the hydrothermal synthesized BFOs.https://www.mdpi.com/1996-1944/16/8/3130bismuth ferritehydrothermal synthesisvacancyhydrogen peroxidecomplex dielectric permittivity |
| spellingShingle | Cristian Casut Raul Bucur Daniel Ursu Iosif Malaescu Marinela Miclau Increasing Electrical Resistivity of P-Type BiFeO<sub>3</sub> Ceramics by Hydrogen Peroxide-Assisted Hydrothermal Synthesis Materials bismuth ferrite hydrothermal synthesis vacancy hydrogen peroxide complex dielectric permittivity |
| title | Increasing Electrical Resistivity of P-Type BiFeO<sub>3</sub> Ceramics by Hydrogen Peroxide-Assisted Hydrothermal Synthesis |
| title_full | Increasing Electrical Resistivity of P-Type BiFeO<sub>3</sub> Ceramics by Hydrogen Peroxide-Assisted Hydrothermal Synthesis |
| title_fullStr | Increasing Electrical Resistivity of P-Type BiFeO<sub>3</sub> Ceramics by Hydrogen Peroxide-Assisted Hydrothermal Synthesis |
| title_full_unstemmed | Increasing Electrical Resistivity of P-Type BiFeO<sub>3</sub> Ceramics by Hydrogen Peroxide-Assisted Hydrothermal Synthesis |
| title_short | Increasing Electrical Resistivity of P-Type BiFeO<sub>3</sub> Ceramics by Hydrogen Peroxide-Assisted Hydrothermal Synthesis |
| title_sort | increasing electrical resistivity of p type bifeo sub 3 sub ceramics by hydrogen peroxide assisted hydrothermal synthesis |
| topic | bismuth ferrite hydrothermal synthesis vacancy hydrogen peroxide complex dielectric permittivity |
| url | https://www.mdpi.com/1996-1944/16/8/3130 |
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