The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2
-The development of high-quality chemical vapor-deposited mono- and few-layer MoS2 is of high relevance for future applications in functional devices. Consequently, a detailed understanding of the growth mode and the parameters affecting it is important. Here, we show for the case of mono- and few-l...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0087207 |
| _version_ | 1818536274296832000 |
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| author | Jonathan Rommelfangen Sven Reichardt Van Ben Chu Ludger Wirtz Phillip J. Dale Alex Redinger |
| author_facet | Jonathan Rommelfangen Sven Reichardt Van Ben Chu Ludger Wirtz Phillip J. Dale Alex Redinger |
| author_sort | Jonathan Rommelfangen |
| collection | DOAJ |
| description | -The development of high-quality chemical vapor-deposited mono- and few-layer MoS2 is of high relevance for future applications in functional devices. Consequently, a detailed understanding of the growth mode and the parameters affecting it is important. Here, we show for the case of mono- and few-layer MoS2 grown on Muscovite mica, how strain and temperature impact the growth mode. We show how misleading the determination of the number of MoS2 layers is, solely based on Raman spectroscopy due to the occurrence of strain and changes in the growth mode. A combination of atomic force microscopy, Raman spectroscopy, and ab initio calculations reveal that that the growth at 500 °C synthesis temperature exhibits a strained layer-by-layer growth of up to three mono-layers, whereas at 700 °C, a strain release occurs and layer-by-layer growth is confined to the first mono-layer only. We relate the occurrence of strain to the formation of gas bubbles below the MoS2 film, escaping the mica sheets during high temperature synthesis. Our analysis shows that mica substrates can be used to study strain in 2D materials without the need to apply external stress and that a detailed knowledge of the MoS2 morphology is necessary to correctly interpret the Raman results. |
| first_indexed | 2024-12-11T18:35:51Z |
| format | Article |
| id | doaj.art-072d23c9417240b8bd1a6e132cf67098 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T18:35:51Z |
| publishDate | 2022-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-072d23c9417240b8bd1a6e132cf670982022-12-22T00:54:45ZengAIP Publishing LLCAIP Advances2158-32262022-06-01126065010065010-710.1063/5.0087207The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2Jonathan Rommelfangen0Sven Reichardt1Van Ben Chu2Ludger Wirtz3Phillip J. Dale4Alex Redinger5Department of Physics and Materials Science, University of Luxembourg, Luxembourg, LuxembourgDepartment of Physics and Materials Science, University of Luxembourg, Luxembourg, LuxembourgDepartment of Physics and Materials Science, University of Luxembourg, Luxembourg, LuxembourgDepartment of Physics and Materials Science, University of Luxembourg, Luxembourg, LuxembourgDepartment of Physics and Materials Science, University of Luxembourg, Luxembourg, LuxembourgDepartment of Physics and Materials Science, University of Luxembourg, Luxembourg, Luxembourg-The development of high-quality chemical vapor-deposited mono- and few-layer MoS2 is of high relevance for future applications in functional devices. Consequently, a detailed understanding of the growth mode and the parameters affecting it is important. Here, we show for the case of mono- and few-layer MoS2 grown on Muscovite mica, how strain and temperature impact the growth mode. We show how misleading the determination of the number of MoS2 layers is, solely based on Raman spectroscopy due to the occurrence of strain and changes in the growth mode. A combination of atomic force microscopy, Raman spectroscopy, and ab initio calculations reveal that that the growth at 500 °C synthesis temperature exhibits a strained layer-by-layer growth of up to three mono-layers, whereas at 700 °C, a strain release occurs and layer-by-layer growth is confined to the first mono-layer only. We relate the occurrence of strain to the formation of gas bubbles below the MoS2 film, escaping the mica sheets during high temperature synthesis. Our analysis shows that mica substrates can be used to study strain in 2D materials without the need to apply external stress and that a detailed knowledge of the MoS2 morphology is necessary to correctly interpret the Raman results.http://dx.doi.org/10.1063/5.0087207 |
| spellingShingle | Jonathan Rommelfangen Sven Reichardt Van Ben Chu Ludger Wirtz Phillip J. Dale Alex Redinger The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2 AIP Advances |
| title | The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2 |
| title_full | The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2 |
| title_fullStr | The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2 |
| title_full_unstemmed | The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2 |
| title_short | The impact of strain on growth mode in chemical vapor deposited mono- and few-layer MoS2 |
| title_sort | impact of strain on growth mode in chemical vapor deposited mono and few layer mos2 |
| url | http://dx.doi.org/10.1063/5.0087207 |
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