Performance Analysis Of SRAM and Dram in Low Power Application
All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of the memory chips, to increase the speed, to r...
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| Format: | Article |
| Language: | English |
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EDP Sciences
2023-01-01
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| Series: | E3S Web of Conferences |
| Subjects: | |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/36/e3sconf_iconnect2023_01014.pdf |
| _version_ | 1797775937693024256 |
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| author | Yuvaraj S. Padmanaban D. PraveenKumar G. Sahu Satendra Umida Masharipova Yokeshwaran R. |
| author_facet | Yuvaraj S. Padmanaban D. PraveenKumar G. Sahu Satendra Umida Masharipova Yokeshwaran R. |
| author_sort | Yuvaraj S. |
| collection | DOAJ |
| description | All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of the memory chips, to increase the speed, to reduce leakage current, and to increase the power efficiency. Due to its high storage density and quick access time, it has also become a popular data storage device. SRAM has been given priority in the research community due to the recent sharp development in low power and low voltage memory devices. In this study, the design and performance of SRAM and DRAM cells were analyzed. This paper outlines the development and application of modified 6T SRAM cell with increased power efficiency. |
| first_indexed | 2024-03-12T22:42:51Z |
| format | Article |
| id | doaj.art-0733bf509a8546d19a1edbd7c1246890 |
| institution | Directory Open Access Journal |
| issn | 2267-1242 |
| language | English |
| last_indexed | 2024-03-12T22:42:51Z |
| publishDate | 2023-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | E3S Web of Conferences |
| spelling | doaj.art-0733bf509a8546d19a1edbd7c12468902023-07-21T09:28:34ZengEDP SciencesE3S Web of Conferences2267-12422023-01-013990101410.1051/e3sconf/202339901014e3sconf_iconnect2023_01014Performance Analysis Of SRAM and Dram in Low Power ApplicationYuvaraj S.0Padmanaban D.1PraveenKumar G.2Sahu Satendra3Umida Masharipova4Yokeshwaran R.5Department of Electronics And Communication Engineering, Prince shri Venkateshwara Padmavathy Engineering CollegeDepartment of Electronics And Communication Engineering, Prince shri Venkateshwara Padmavathy Engineering CollegeDepartment of Electronics And Communication Engineering, Prince shri Venkateshwara Padmavathy Engineering CollegeDepartment of Mechanical Engineering, IES College Of TechnologyTashkent State Pedagogical UniversityAssistant professor, Department of mechanical Engineering, K. Ramakrishnan college of technologyAll electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of the memory chips, to increase the speed, to reduce leakage current, and to increase the power efficiency. Due to its high storage density and quick access time, it has also become a popular data storage device. SRAM has been given priority in the research community due to the recent sharp development in low power and low voltage memory devices. In this study, the design and performance of SRAM and DRAM cells were analyzed. This paper outlines the development and application of modified 6T SRAM cell with increased power efficiency.https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/36/e3sconf_iconnect2023_01014.pdfsramdramleakage current |
| spellingShingle | Yuvaraj S. Padmanaban D. PraveenKumar G. Sahu Satendra Umida Masharipova Yokeshwaran R. Performance Analysis Of SRAM and Dram in Low Power Application E3S Web of Conferences sram dram leakage current |
| title | Performance Analysis Of SRAM and Dram in Low Power Application |
| title_full | Performance Analysis Of SRAM and Dram in Low Power Application |
| title_fullStr | Performance Analysis Of SRAM and Dram in Low Power Application |
| title_full_unstemmed | Performance Analysis Of SRAM and Dram in Low Power Application |
| title_short | Performance Analysis Of SRAM and Dram in Low Power Application |
| title_sort | performance analysis of sram and dram in low power application |
| topic | sram dram leakage current |
| url | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/36/e3sconf_iconnect2023_01014.pdf |
| work_keys_str_mv | AT yuvarajs performanceanalysisofsramanddraminlowpowerapplication AT padmanaband performanceanalysisofsramanddraminlowpowerapplication AT praveenkumarg performanceanalysisofsramanddraminlowpowerapplication AT sahusatendra performanceanalysisofsramanddraminlowpowerapplication AT umidamasharipova performanceanalysisofsramanddraminlowpowerapplication AT yokeshwaranr performanceanalysisofsramanddraminlowpowerapplication |