Role of an encapsulating layer for reducing resistance drift in phase change random access memory
Phase change random access memory (PCRAM) devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer materia...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2014-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4905451 |
| _version_ | 1819024599555244032 |
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| author | Bo Jin Jungsik Kim Dong-Hai Pi Hyoung Seop Kim M. Meyyappan Jeong-Soo Lee |
| author_facet | Bo Jin Jungsik Kim Dong-Hai Pi Hyoung Seop Kim M. Meyyappan Jeong-Soo Lee |
| author_sort | Bo Jin |
| collection | DOAJ |
| description | Phase change random access memory (PCRAM) devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer material in addressing the resistance drift phenomenon in PCRAM. The resistance drift can be increased or decreased depending on the biaxial moduli of the phase change material (YPCM) and the encapsulating layer material (YELM) according to the stress relationship between them in the drift regime. The proposed model suggests that the resistance drift can be effectively reduced by selecting a proper material as an encapsulating layer. Moreover, our model explains that reducing the size of the phase change material (PCM) while fully reset and reducing the amorphous/crystalline ratio in PCM help to improve the resistance drift, and thus opens an avenue for highly reliable multilevel PCRAM applications. |
| first_indexed | 2024-12-21T04:57:21Z |
| format | Article |
| id | doaj.art-0769665f517540bbbf6f82e083aa3504 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T04:57:21Z |
| publishDate | 2014-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-0769665f517540bbbf6f82e083aa35042022-12-21T19:15:18ZengAIP Publishing LLCAIP Advances2158-32262014-12-01412127155127155-910.1063/1.4905451056412ADVRole of an encapsulating layer for reducing resistance drift in phase change random access memoryBo Jin0Jungsik Kim1Dong-Hai Pi2Hyoung Seop Kim3M. Meyyappan4Jeong-Soo Lee5Division of IT Convergence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of KoreaDivision of IT Convergence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of KoreaNASA Ames Research Center, Moffett Field, CA 94035, USADivision of IT Convergence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of KoreaPhase change random access memory (PCRAM) devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer material in addressing the resistance drift phenomenon in PCRAM. The resistance drift can be increased or decreased depending on the biaxial moduli of the phase change material (YPCM) and the encapsulating layer material (YELM) according to the stress relationship between them in the drift regime. The proposed model suggests that the resistance drift can be effectively reduced by selecting a proper material as an encapsulating layer. Moreover, our model explains that reducing the size of the phase change material (PCM) while fully reset and reducing the amorphous/crystalline ratio in PCM help to improve the resistance drift, and thus opens an avenue for highly reliable multilevel PCRAM applications.http://dx.doi.org/10.1063/1.4905451 |
| spellingShingle | Bo Jin Jungsik Kim Dong-Hai Pi Hyoung Seop Kim M. Meyyappan Jeong-Soo Lee Role of an encapsulating layer for reducing resistance drift in phase change random access memory AIP Advances |
| title | Role of an encapsulating layer for reducing resistance drift in phase change random access memory |
| title_full | Role of an encapsulating layer for reducing resistance drift in phase change random access memory |
| title_fullStr | Role of an encapsulating layer for reducing resistance drift in phase change random access memory |
| title_full_unstemmed | Role of an encapsulating layer for reducing resistance drift in phase change random access memory |
| title_short | Role of an encapsulating layer for reducing resistance drift in phase change random access memory |
| title_sort | role of an encapsulating layer for reducing resistance drift in phase change random access memory |
| url | http://dx.doi.org/10.1063/1.4905451 |
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