Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT
A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is fabricated by molecular beam epitaxy (MBE). The force...
Main Authors: | Rui-Rong Wang, Hao Guo, Jun Tang, Jin-Ping Liu, Li-Shuang Liu |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-11-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/12/11/1413 |
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