Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad

The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode. The Schottky barrier height exhibits a strong correlation with the work function of the electrode. We observed rectifying current–vo...

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Main Authors: Yoshihiro Shimazu, Tatsuya Iwabuchi, Kensuke Arai
Format: Article
Language:English
Published: AIP Publishing LLC 2019-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5108541
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author Yoshihiro Shimazu
Tatsuya Iwabuchi
Kensuke Arai
author_facet Yoshihiro Shimazu
Tatsuya Iwabuchi
Kensuke Arai
author_sort Yoshihiro Shimazu
collection DOAJ
description The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode. The Schottky barrier height exhibits a strong correlation with the work function of the electrode. We observed rectifying current–voltage characteristics for a back-gated field effect transistor with a channel of molybdenum disulfide and Al electrodes, where one of the electrodes is attached to a Au pad. This result is explained in terms of the increase in the effective work function of the Al electrode attached to the Au pad. The dependence of a photocurrent on the bias voltage exhibited an opposite tendency to the current–voltage characteristics; this is also attributed to the work function modulation of the electrode, thus resulting in the variation in the Schottky barrier height.
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spelling doaj.art-07a5f138e1cf4a1f824401e4c3f54b952022-12-22T02:02:02ZengAIP Publishing LLCAIP Advances2158-32262019-08-0198085118085118-510.1063/1.5108541078908ADVWork function modulation of electrodes contacted to molybdenum disulfide using an attached metal padYoshihiro Shimazu0Tatsuya Iwabuchi1Kensuke Arai2Department of Physics, Yokohama National University, Yokohama 240-8501, JapanDepartment of Physics, Yokohama National University, Yokohama 240-8501, JapanDepartment of Physics, Yokohama National University, Yokohama 240-8501, JapanThe transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode. The Schottky barrier height exhibits a strong correlation with the work function of the electrode. We observed rectifying current–voltage characteristics for a back-gated field effect transistor with a channel of molybdenum disulfide and Al electrodes, where one of the electrodes is attached to a Au pad. This result is explained in terms of the increase in the effective work function of the Al electrode attached to the Au pad. The dependence of a photocurrent on the bias voltage exhibited an opposite tendency to the current–voltage characteristics; this is also attributed to the work function modulation of the electrode, thus resulting in the variation in the Schottky barrier height.http://dx.doi.org/10.1063/1.5108541
spellingShingle Yoshihiro Shimazu
Tatsuya Iwabuchi
Kensuke Arai
Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
AIP Advances
title Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
title_full Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
title_fullStr Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
title_full_unstemmed Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
title_short Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
title_sort work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
url http://dx.doi.org/10.1063/1.5108541
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AT kensukearai workfunctionmodulationofelectrodescontactedtomolybdenumdisulfideusinganattachedmetalpad