Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot Pressing
Textile electronics are ideal for novel electronic devices owing to their flexibility, light weight, and wearability. In this work, wearable organic field-effect transistors (OFETs) with all-graphene electrodes, fabricated using hot pressing, are described. First, highly conductive and flexible elec...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-06-01
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| Series: | Polymers |
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| Online Access: | https://www.mdpi.com/2073-4360/14/13/2602 |
| _version_ | 1797408281557204992 |
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| author | Youn Kim Jin-Yong Hong Young-Pyo Jeon Jung Bin Park Cheol Jin Lee Jea Uk Lee |
| author_facet | Youn Kim Jin-Yong Hong Young-Pyo Jeon Jung Bin Park Cheol Jin Lee Jea Uk Lee |
| author_sort | Youn Kim |
| collection | DOAJ |
| description | Textile electronics are ideal for novel electronic devices owing to their flexibility, light weight, and wearability. In this work, wearable organic field-effect transistors (OFETs) with all-graphene electrodes, fabricated using hot pressing, are described. First, highly conductive and flexible electrodes consisting of a cotton textile substrate and electrochemically exfoliated graphene (EEG) were prepared via hot pressing. The EEG/textile electrodes exhibited a low sheet resistance of 1.3 Ω sq<sup>−1</sup> and high flexibility; these were used as gate electrodes in the wearable OFETs. In addition, spray-coated EEG was also used as the source/drain (S/D) electrodes of the wearable OFETs, which recorded a sheet resistance of 14.8 Ω sq<sup>−1</sup> after hot pressing. The wearable OFETs exhibited stable electrical performance, a field-effect mobility of 13.8 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, and an on–off current ratio of ~10<sup>3</sup> during 1000 cycles of bending. Consequently, the fabrication method for wearable transistors developed using textiles and hot-pressed graphene electrodes has potential applications in next-generation wearable devices. |
| first_indexed | 2024-03-09T03:57:09Z |
| format | Article |
| id | doaj.art-07b6535f2727402d9ce406ba6b3e9983 |
| institution | Directory Open Access Journal |
| issn | 2073-4360 |
| language | English |
| last_indexed | 2024-03-09T03:57:09Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Polymers |
| spelling | doaj.art-07b6535f2727402d9ce406ba6b3e99832023-12-03T14:18:35ZengMDPI AGPolymers2073-43602022-06-011413260210.3390/polym14132602Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot PressingYoun Kim0Jin-Yong Hong1Young-Pyo Jeon2Jung Bin Park3Cheol Jin Lee4Jea Uk Lee5School of Electrical Engineering, Korea University, Seoul 02841, KoreaCarbon Industry Frontier Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, KoreaCarbon Industry Frontier Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, KoreaDepartment of Advanced Materials Engineering for Information and Electronics, Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin-si 17104, Gyeonggi-do, KoreaSchool of Electrical Engineering, Korea University, Seoul 02841, KoreaDepartment of Advanced Materials Engineering for Information and Electronics, Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin-si 17104, Gyeonggi-do, KoreaTextile electronics are ideal for novel electronic devices owing to their flexibility, light weight, and wearability. In this work, wearable organic field-effect transistors (OFETs) with all-graphene electrodes, fabricated using hot pressing, are described. First, highly conductive and flexible electrodes consisting of a cotton textile substrate and electrochemically exfoliated graphene (EEG) were prepared via hot pressing. The EEG/textile electrodes exhibited a low sheet resistance of 1.3 Ω sq<sup>−1</sup> and high flexibility; these were used as gate electrodes in the wearable OFETs. In addition, spray-coated EEG was also used as the source/drain (S/D) electrodes of the wearable OFETs, which recorded a sheet resistance of 14.8 Ω sq<sup>−1</sup> after hot pressing. The wearable OFETs exhibited stable electrical performance, a field-effect mobility of 13.8 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, and an on–off current ratio of ~10<sup>3</sup> during 1000 cycles of bending. Consequently, the fabrication method for wearable transistors developed using textiles and hot-pressed graphene electrodes has potential applications in next-generation wearable devices.https://www.mdpi.com/2073-4360/14/13/2602textilegrapheneelectrodehot pressingtransistor |
| spellingShingle | Youn Kim Jin-Yong Hong Young-Pyo Jeon Jung Bin Park Cheol Jin Lee Jea Uk Lee Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot Pressing Polymers textile graphene electrode hot pressing transistor |
| title | Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot Pressing |
| title_full | Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot Pressing |
| title_fullStr | Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot Pressing |
| title_full_unstemmed | Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot Pressing |
| title_short | Fabrication of Wearable Transistor with All-Graphene Electrodes via Hot Pressing |
| title_sort | fabrication of wearable transistor with all graphene electrodes via hot pressing |
| topic | textile graphene electrode hot pressing transistor |
| url | https://www.mdpi.com/2073-4360/14/13/2602 |
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