CNTFET Technology for RF Applications: Review and Future Perspective
RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the di...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of Microwaves |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9318747/ |
| _version_ | 1818737282943811584 |
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| author | Martin Hartmann Sascha Hermann Phil F. Marsh Christopher Rutherglen Dawei Wang Li Ding Lian-Mao Peng Martin Claus Michael Schroter |
| author_facet | Martin Hartmann Sascha Hermann Phil F. Marsh Christopher Rutherglen Dawei Wang Li Ding Lian-Mao Peng Martin Claus Michael Schroter |
| author_sort | Martin Hartmann |
| collection | DOAJ |
| description | RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip. |
| first_indexed | 2024-12-18T00:50:35Z |
| format | Article |
| id | doaj.art-07bd314cb7944f07ad5e1d11e334a4dc |
| institution | Directory Open Access Journal |
| issn | 2692-8388 |
| language | English |
| last_indexed | 2024-12-18T00:50:35Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of Microwaves |
| spelling | doaj.art-07bd314cb7944f07ad5e1d11e334a4dc2022-12-21T21:26:41ZengIEEEIEEE Journal of Microwaves2692-83882021-01-011127528710.1109/JMW.2020.30337819318747CNTFET Technology for RF Applications: Review and Future PerspectiveMartin Hartmann0https://orcid.org/0000-0002-4102-897XSascha Hermann1Phil F. Marsh2Christopher Rutherglen3Dawei Wang4Li Ding5https://orcid.org/0000-0003-4310-9957Lian-Mao Peng6https://orcid.org/0000-0003-0754-074XMartin Claus7https://orcid.org/0000-0001-8009-8463Michael Schroter8Center for Microtechnology, Chemnitz University of Technology, Chemnitz, GermanyCenter for Microtechnology, Chemnitz University of Technology, Chemnitz, GermanyCarbonics Inc., Culver City, CA, USACarbonics Inc., Culver City, CA, USACarbon Technology Inc., Irvine, CA, USAKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing, ChinaKey Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing, ChinaChair for Electron Devices and Integrated Circuits, Technical University Dresden, Dresden, GermanyChair for Electron Devices and Integrated Circuits, Technical University Dresden, Dresden, GermanyRF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.https://ieeexplore.ieee.org/document/9318747/Carbon nanotubesCNTFETradio frequencycut-off frequencymaximum oscillation frequencieslinearity |
| spellingShingle | Martin Hartmann Sascha Hermann Phil F. Marsh Christopher Rutherglen Dawei Wang Li Ding Lian-Mao Peng Martin Claus Michael Schroter CNTFET Technology for RF Applications: Review and Future Perspective IEEE Journal of Microwaves Carbon nanotubes CNTFET radio frequency cut-off frequency maximum oscillation frequencies linearity |
| title | CNTFET Technology for RF Applications: Review and Future Perspective |
| title_full | CNTFET Technology for RF Applications: Review and Future Perspective |
| title_fullStr | CNTFET Technology for RF Applications: Review and Future Perspective |
| title_full_unstemmed | CNTFET Technology for RF Applications: Review and Future Perspective |
| title_short | CNTFET Technology for RF Applications: Review and Future Perspective |
| title_sort | cntfet technology for rf applications review and future perspective |
| topic | Carbon nanotubes CNTFET radio frequency cut-off frequency maximum oscillation frequencies linearity |
| url | https://ieeexplore.ieee.org/document/9318747/ |
| work_keys_str_mv | AT martinhartmann cntfettechnologyforrfapplicationsreviewandfutureperspective AT saschahermann cntfettechnologyforrfapplicationsreviewandfutureperspective AT philfmarsh cntfettechnologyforrfapplicationsreviewandfutureperspective AT christopherrutherglen cntfettechnologyforrfapplicationsreviewandfutureperspective AT daweiwang cntfettechnologyforrfapplicationsreviewandfutureperspective AT liding cntfettechnologyforrfapplicationsreviewandfutureperspective AT lianmaopeng cntfettechnologyforrfapplicationsreviewandfutureperspective AT martinclaus cntfettechnologyforrfapplicationsreviewandfutureperspective AT michaelschroter cntfettechnologyforrfapplicationsreviewandfutureperspective |