CNTFET Technology for RF Applications: Review and Future Perspective
RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the di...
Main Authors: | Martin Hartmann, Sascha Hermann, Phil F. Marsh, Christopher Rutherglen, Dawei Wang, Li Ding, Lian-Mao Peng, Martin Claus, Michael Schroter |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
|
Series: | IEEE Journal of Microwaves |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9318747/ |
Similar Items
-
Carbon Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview
by: Michael Schroter, et al.
Published: (2013-01-01) -
Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD
by: Ajay Kumar, et al.
Published: (2022-08-01) -
RF and microwave oscillator design /
by: Odyniec, Micha
Published: (c200) -
Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET
by: A. Salah, et al.
Published: (2023-02-01) -
Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
by: Khadir Abdelkader, et al.
Published: (2019-12-01)