Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers

The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks,...

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Main Authors: Yujin Jung, Kwanhong Min, Soohyun Bae, Myeongseob Sim, Yoonmook Kang, Haeseok Lee, Donghwan Kim
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/13/24/6610
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author Yujin Jung
Kwanhong Min
Soohyun Bae
Myeongseob Sim
Yoonmook Kang
Haeseok Lee
Donghwan Kim
author_facet Yujin Jung
Kwanhong Min
Soohyun Bae
Myeongseob Sim
Yoonmook Kang
Haeseok Lee
Donghwan Kim
author_sort Yujin Jung
collection DOAJ
description The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment.
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spelling doaj.art-07f8cd99a685411d98508c77ee254a802023-11-21T00:49:39ZengMDPI AGEnergies1996-10732020-12-011324661010.3390/en13246610Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon WafersYujin Jung0Kwanhong Min1Soohyun Bae2Myeongseob Sim3Yoonmook Kang4Haeseok Lee5Donghwan Kim6Department of Materials Science and Engineering, Korea University, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, Seoul 02841, KoreaDepartment of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, KoreaDepartment of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, Seoul 02841, KoreaThe etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment.https://www.mdpi.com/1996-1073/13/24/6610thermal treatmenttexturingmonocrystalline Si texturingdiamond wire-sawn mono-silicon waferalkaline etchinganisotropic etching
spellingShingle Yujin Jung
Kwanhong Min
Soohyun Bae
Myeongseob Sim
Yoonmook Kang
Haeseok Lee
Donghwan Kim
Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
Energies
thermal treatment
texturing
monocrystalline Si texturing
diamond wire-sawn mono-silicon wafer
alkaline etching
anisotropic etching
title Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
title_full Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
title_fullStr Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
title_full_unstemmed Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
title_short Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
title_sort pre texturing thermal treatment for saw damage removal free wet texturing of monocrystalline silicon wafers
topic thermal treatment
texturing
monocrystalline Si texturing
diamond wire-sawn mono-silicon wafer
alkaline etching
anisotropic etching
url https://www.mdpi.com/1996-1073/13/24/6610
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