Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and...

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Bibliographic Details
Main Authors: Marius Eich, Riccardo Pisoni, Hiske Overweg, Annika Kurzmann, Yongjin Lee, Peter Rickhaus, Thomas Ihn, Klaus Ensslin, František Herman, Manfred Sigrist, Kenji Watanabe, Takashi Taniguchi
Format: Article
Language:English
Published: American Physical Society 2018-07-01
Series:Physical Review X
Online Access:http://doi.org/10.1103/PhysRevX.8.031023
Description
Summary:In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers n=1,2,…50 can be filled successively into the quantum system with charging energies exceeding 10 meV. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of g_{s}≈2. In the low-field limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.
ISSN:2160-3308