Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2018-07-01
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| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.8.031023 |
| _version_ | 1818683669823356928 |
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| author | Marius Eich Riccardo Pisoni Hiske Overweg Annika Kurzmann Yongjin Lee Peter Rickhaus Thomas Ihn Klaus Ensslin František Herman Manfred Sigrist Kenji Watanabe Takashi Taniguchi |
| author_facet | Marius Eich Riccardo Pisoni Hiske Overweg Annika Kurzmann Yongjin Lee Peter Rickhaus Thomas Ihn Klaus Ensslin František Herman Manfred Sigrist Kenji Watanabe Takashi Taniguchi |
| author_sort | Marius Eich |
| collection | DOAJ |
| description | In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers n=1,2,…50 can be filled successively into the quantum system with charging energies exceeding 10 meV. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of g_{s}≈2. In the low-field limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations. |
| first_indexed | 2024-12-17T10:38:25Z |
| format | Article |
| id | doaj.art-0808a9e56989446ead06c5fd9f9bc420 |
| institution | Directory Open Access Journal |
| issn | 2160-3308 |
| language | English |
| last_indexed | 2024-12-17T10:38:25Z |
| publishDate | 2018-07-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review X |
| spelling | doaj.art-0808a9e56989446ead06c5fd9f9bc4202022-12-21T21:52:18ZengAmerican Physical SocietyPhysical Review X2160-33082018-07-018303102310.1103/PhysRevX.8.031023Spin and Valley States in Gate-Defined Bilayer Graphene Quantum DotsMarius EichRiccardo PisoniHiske OverwegAnnika KurzmannYongjin LeePeter RickhausThomas IhnKlaus EnsslinFrantišek HermanManfred SigristKenji WatanabeTakashi TaniguchiIn bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers n=1,2,…50 can be filled successively into the quantum system with charging energies exceeding 10 meV. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of g_{s}≈2. In the low-field limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.http://doi.org/10.1103/PhysRevX.8.031023 |
| spellingShingle | Marius Eich Riccardo Pisoni Hiske Overweg Annika Kurzmann Yongjin Lee Peter Rickhaus Thomas Ihn Klaus Ensslin František Herman Manfred Sigrist Kenji Watanabe Takashi Taniguchi Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots Physical Review X |
| title | Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots |
| title_full | Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots |
| title_fullStr | Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots |
| title_full_unstemmed | Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots |
| title_short | Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots |
| title_sort | spin and valley states in gate defined bilayer graphene quantum dots |
| url | http://doi.org/10.1103/PhysRevX.8.031023 |
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