Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate
We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discret...
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| author | Elena S. Makarova Anastasiia S. Tukmakova Anna V. Novotelnova Vladimir A. Komarov Vasilisa A. Gerega Natallya S. Kablukova Mikhail K. Khodzitsky |
| author_facet | Elena S. Makarova Anastasiia S. Tukmakova Anna V. Novotelnova Vladimir A. Komarov Vasilisa A. Gerega Natallya S. Kablukova Mikhail K. Khodzitsky |
| author_sort | Elena S. Makarova |
| collection | DOAJ |
| description | We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2–6 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m compared to 10–30 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time. |
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| language | English |
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| series | Materials |
| spelling | doaj.art-0809fe79c228443bb352521354f0abec2023-11-19T22:40:42ZengMDPI AGMaterials1996-19442020-04-01139201010.3390/ma13092010Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica SubstrateElena S. Makarova0Anastasiia S. Tukmakova1Anna V. Novotelnova2Vladimir A. Komarov3Vasilisa A. Gerega4Natallya S. Kablukova5Mikhail K. Khodzitsky6Faculty of Cryogenic Engineering, ITMO University, Saint-Petersburg 197101, RussiaFaculty of Cryogenic Engineering, ITMO University, Saint-Petersburg 197101, RussiaFaculty of Cryogenic Engineering, ITMO University, Saint-Petersburg 197101, RussiaFaculty of Physics, Department of General and Experimental Physics, Herzen State Pedagogical University of Russia, Saint Petersburg 191186, RussiaFaculty of Physics, Department of General and Experimental Physics, Herzen State Pedagogical University of Russia, Saint Petersburg 191186, RussiaInternational Scientific and Research Institute of Bioengineering, ITMO University, Saint-Petersburg 197101, RussiaInternational Scientific and Research Institute of Bioengineering, ITMO University, Saint-Petersburg 197101, RussiaWe report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2–6 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m compared to 10–30 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time.https://www.mdpi.com/1996-1944/13/9/2010thin filmbismuthgalvanomagnetic propertiesresistancerelative magnetoresistancehall coefficient |
| spellingShingle | Elena S. Makarova Anastasiia S. Tukmakova Anna V. Novotelnova Vladimir A. Komarov Vasilisa A. Gerega Natallya S. Kablukova Mikhail K. Khodzitsky Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate Materials thin film bismuth galvanomagnetic properties resistance relative magnetoresistance hall coefficient |
| title | Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate |
| title_full | Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate |
| title_fullStr | Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate |
| title_full_unstemmed | Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate |
| title_short | Effect of Antimony Buffer Layer on the Electric and Magnetic Properties of 200 and 600 nm Thick Bismuth Films on Mica Substrate |
| title_sort | effect of antimony buffer layer on the electric and magnetic properties of 200 and 600 nm thick bismuth films on mica substrate |
| topic | thin film bismuth galvanomagnetic properties resistance relative magnetoresistance hall coefficient |
| url | https://www.mdpi.com/1996-1944/13/9/2010 |
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