Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide
Transition metal dichalcogenides (TMDCs) have attracted intense interest; however, despite the considerable effort of researchers, a universal manufacturing method that can guarantee both high material quality and throughput has not been realized to date. Herein, a universal approach to producing hi...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-09-01
|
| Series: | Small Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/smsc.202300033 |
| _version_ | 1827807159440637952 |
|---|---|
| author | Sein Kim Seung-Il Kim Soheil Ghods Jin-Su Kim Young Cheol Lee Hyung Jun Kwun Ji-Yun Moon Jae-Hyun Lee |
| author_facet | Sein Kim Seung-Il Kim Soheil Ghods Jin-Su Kim Young Cheol Lee Hyung Jun Kwun Ji-Yun Moon Jae-Hyun Lee |
| author_sort | Sein Kim |
| collection | DOAJ |
| description | Transition metal dichalcogenides (TMDCs) have attracted intense interest; however, despite the considerable effort of researchers, a universal manufacturing method that can guarantee both high material quality and throughput has not been realized to date. Herein, a universal approach to producing high‐quality monolayer TMDCs on a large scale via germanium (Ge)‐mediated atomic spalling is presented. Through the modified analytic model, the study verifies that the thin Ge film could be a suitable stressor that effectively reduces the crack propagation depth at the sub‐nanometer range. In particular, an acid‐etching process is not required in the overall atomic spalling process due to the water‐soluble nature of the Ge, enabling it widely applicable to various TMDCs. Under the optimized spalling conditions, a millimeter‐sized monolayer of stable MoS2, as well as unstable MoTe2, is successfully achieved. Through detailed spectroscopic and electrical characterizations, it is confirmed that the proposed methodology for obtaining large‐area atomic layers does not introduce any significant structural defects or chemical contaminations. |
| first_indexed | 2024-03-11T21:53:17Z |
| format | Article |
| id | doaj.art-080cd8ee22e142ca9645df6bb657a45f |
| institution | Directory Open Access Journal |
| issn | 2688-4046 |
| language | English |
| last_indexed | 2024-03-11T21:53:17Z |
| publishDate | 2023-09-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Science |
| spelling | doaj.art-080cd8ee22e142ca9645df6bb657a45f2023-09-26T05:35:39ZengWiley-VCHSmall Science2688-40462023-09-0139n/an/a10.1002/smsc.202300033Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal DichalcogenideSein Kim0Seung-Il Kim1Soheil Ghods2Jin-Su Kim3Young Cheol Lee4Hyung Jun Kwun5Ji-Yun Moon6Jae-Hyun Lee7Department of Energy Systems Research Ajou University Suwon 16499 Republic of KoreaDepartment of Energy Systems Research Ajou University Suwon 16499 Republic of KoreaDepartment of Energy Systems Research Ajou University Suwon 16499 Republic of KoreaDepartment of Materials Science and Engineering Ajou University Suwon 16499 Republic of KoreaDepartment of Materials Science and Engineering Ajou University Suwon 16499 Republic of KoreaDepartment of Materials Science and Engineering Ajou University Suwon 16499 Republic of KoreaDepartment of Energy Systems Research Ajou University Suwon 16499 Republic of KoreaDepartment of Energy Systems Research Ajou University Suwon 16499 Republic of KoreaTransition metal dichalcogenides (TMDCs) have attracted intense interest; however, despite the considerable effort of researchers, a universal manufacturing method that can guarantee both high material quality and throughput has not been realized to date. Herein, a universal approach to producing high‐quality monolayer TMDCs on a large scale via germanium (Ge)‐mediated atomic spalling is presented. Through the modified analytic model, the study verifies that the thin Ge film could be a suitable stressor that effectively reduces the crack propagation depth at the sub‐nanometer range. In particular, an acid‐etching process is not required in the overall atomic spalling process due to the water‐soluble nature of the Ge, enabling it widely applicable to various TMDCs. Under the optimized spalling conditions, a millimeter‐sized monolayer of stable MoS2, as well as unstable MoTe2, is successfully achieved. Through detailed spectroscopic and electrical characterizations, it is confirmed that the proposed methodology for obtaining large‐area atomic layers does not introduce any significant structural defects or chemical contaminations.https://doi.org/10.1002/smsc.202300033atomic spallinggermaniummonolayerstransition metal dichalcogenideswet etching |
| spellingShingle | Sein Kim Seung-Il Kim Soheil Ghods Jin-Su Kim Young Cheol Lee Hyung Jun Kwun Ji-Yun Moon Jae-Hyun Lee Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide Small Science atomic spalling germanium monolayers transition metal dichalcogenides wet etching |
| title | Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide |
| title_full | Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide |
| title_fullStr | Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide |
| title_full_unstemmed | Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide |
| title_short | Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide |
| title_sort | nonmetal mediated atomic spalling of large area monolayer transition metal dichalcogenide |
| topic | atomic spalling germanium monolayers transition metal dichalcogenides wet etching |
| url | https://doi.org/10.1002/smsc.202300033 |
| work_keys_str_mv | AT seinkim nonmetalmediatedatomicspallingoflargeareamonolayertransitionmetaldichalcogenide AT seungilkim nonmetalmediatedatomicspallingoflargeareamonolayertransitionmetaldichalcogenide AT soheilghods nonmetalmediatedatomicspallingoflargeareamonolayertransitionmetaldichalcogenide AT jinsukim nonmetalmediatedatomicspallingoflargeareamonolayertransitionmetaldichalcogenide AT youngcheollee nonmetalmediatedatomicspallingoflargeareamonolayertransitionmetaldichalcogenide AT hyungjunkwun nonmetalmediatedatomicspallingoflargeareamonolayertransitionmetaldichalcogenide AT jiyunmoon nonmetalmediatedatomicspallingoflargeareamonolayertransitionmetaldichalcogenide AT jaehyunlee nonmetalmediatedatomicspallingoflargeareamonolayertransitionmetaldichalcogenide |