MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation under the electrical pump...

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Bibliographic Details
Main Authors: Nikolay Baidus, Vladimir Aleshkin, Alexander Dubinov, Konstantin Kudryavtsev, Sergei Nekorkin, Alexey Novikov, Dmiriy Pavlov, Artem Rykov, Artem Sushkov, Mikhail Shaleev, Pavel Yunin, Dmitriy Yurasov, Zakhariy Krasilnik
Format: Article
Language:English
Published: MDPI AG 2018-07-01
Series:Crystals
Subjects:
epitaxy
MOCVD, laser heterostructures
InGaAs quantum well
silicon substrate
elastic strain
antiphase boundaries
Online Access:http://www.mdpi.com/2073-4352/8/8/311

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