| Summary: | This study investigates switching characteristics of the magnesium fluoride (MgF<sub>x</sub>)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances (open-air and vacuum). Operating ambiances alter the elemental composition of the amorphous MgF<sub>x</sub> active layer and Ti/MgF<sub>x</sub> interface region, which affects the overall device performance. The experimental results indicate that filament type resistive switching takes place at the interface of Ti/MgF<sub>x</sub> and trap-controlled space charge limited conduction (SCLC) mechanisms is dominant in both the low and high resistance states in the bulk MgF<sub>x</sub> layer. RRAM device performances at different operating ambiances are also altered by MgF<sub>x</sub> active layer treatments (air exposure and annealing). Devices show the better uniformity, stability, and a higher on/off current ratio in vacuum compared to an open-air environment. The Ti/MgF<sub>x</sub>/Pt memory devices have great potential for future vacuum electronic applications.
|
|---|