Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM
This study investigates switching characteristics of the magnesium fluoride (MgF<sub>x</sub>)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances (open-air and vacuum). Operating ambiances alter the elemental composition of the amorphous MgF<su...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/4/605 |
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| author | Nayan C. Das Minjae Kim Dong-uk Kwak Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang |
| author_facet | Nayan C. Das Minjae Kim Dong-uk Kwak Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang |
| author_sort | Nayan C. Das |
| collection | DOAJ |
| description | This study investigates switching characteristics of the magnesium fluoride (MgF<sub>x</sub>)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances (open-air and vacuum). Operating ambiances alter the elemental composition of the amorphous MgF<sub>x</sub> active layer and Ti/MgF<sub>x</sub> interface region, which affects the overall device performance. The experimental results indicate that filament type resistive switching takes place at the interface of Ti/MgF<sub>x</sub> and trap-controlled space charge limited conduction (SCLC) mechanisms is dominant in both the low and high resistance states in the bulk MgF<sub>x</sub> layer. RRAM device performances at different operating ambiances are also altered by MgF<sub>x</sub> active layer treatments (air exposure and annealing). Devices show the better uniformity, stability, and a higher on/off current ratio in vacuum compared to an open-air environment. The Ti/MgF<sub>x</sub>/Pt memory devices have great potential for future vacuum electronic applications. |
| first_indexed | 2024-03-09T21:19:26Z |
| format | Article |
| id | doaj.art-0868fcf64a3545aeb5bde48d28c652b8 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T21:19:26Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-0868fcf64a3545aeb5bde48d28c652b82023-11-23T21:25:12ZengMDPI AGNanomaterials2079-49912022-02-0112460510.3390/nano12040605Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAMNayan C. Das0Minjae Kim1Dong-uk Kwak2Jarnardhanan R. Rani3Sung-Min Hong4Jae-Hyung Jang5School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Energy Engineering, Korea Institute of Energy Technology, Naju 58330, KoreaThis study investigates switching characteristics of the magnesium fluoride (MgF<sub>x</sub>)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances (open-air and vacuum). Operating ambiances alter the elemental composition of the amorphous MgF<sub>x</sub> active layer and Ti/MgF<sub>x</sub> interface region, which affects the overall device performance. The experimental results indicate that filament type resistive switching takes place at the interface of Ti/MgF<sub>x</sub> and trap-controlled space charge limited conduction (SCLC) mechanisms is dominant in both the low and high resistance states in the bulk MgF<sub>x</sub> layer. RRAM device performances at different operating ambiances are also altered by MgF<sub>x</sub> active layer treatments (air exposure and annealing). Devices show the better uniformity, stability, and a higher on/off current ratio in vacuum compared to an open-air environment. The Ti/MgF<sub>x</sub>/Pt memory devices have great potential for future vacuum electronic applications.https://www.mdpi.com/2079-4991/12/4/605bipolaroperating environmentannealingfilament type resistive switchingRRAM |
| spellingShingle | Nayan C. Das Minjae Kim Dong-uk Kwak Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM Nanomaterials bipolar operating environment annealing filament type resistive switching RRAM |
| title | Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM |
| title_full | Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM |
| title_fullStr | Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM |
| title_full_unstemmed | Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM |
| title_short | Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM |
| title_sort | effects of the operating ambiance and active layer treatments on the performance of magnesium fluoride based bipolar rram |
| topic | bipolar operating environment annealing filament type resistive switching RRAM |
| url | https://www.mdpi.com/2079-4991/12/4/605 |
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