Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge
The integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of transferrable BaTiO3-δ membrane with enhanced flexoelectricity on Ge (011).
| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-022-30724-7 |
| _version_ | 1817968937706455040 |
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| author | Liyan Dai Jinyan Zhao Jingrui Li Bohan Chen Shijie Zhai Zhongying Xue Zengfeng Di Boyuan Feng Yanxiao Sun Yunyun Luo Ming Ma Jie Zhang Sunan Ding Libo Zhao Zhuangde Jiang Wenbo Luo Yi Quan Jutta Schwarzkopf Thomas Schroeder Zuo-Guang Ye Ya-Hong Xie Wei Ren Gang Niu |
| author_facet | Liyan Dai Jinyan Zhao Jingrui Li Bohan Chen Shijie Zhai Zhongying Xue Zengfeng Di Boyuan Feng Yanxiao Sun Yunyun Luo Ming Ma Jie Zhang Sunan Ding Libo Zhao Zhuangde Jiang Wenbo Luo Yi Quan Jutta Schwarzkopf Thomas Schroeder Zuo-Guang Ye Ya-Hong Xie Wei Ren Gang Niu |
| author_sort | Liyan Dai |
| collection | DOAJ |
| description | The integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of transferrable BaTiO3-δ membrane with enhanced flexoelectricity on Ge (011). |
| first_indexed | 2024-04-13T20:15:08Z |
| format | Article |
| id | doaj.art-086e2df161d74cb189e091ed8908a837 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-04-13T20:15:08Z |
| publishDate | 2022-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-086e2df161d74cb189e091ed8908a8372022-12-22T02:31:44ZengNature PortfolioNature Communications2041-17232022-05-0113111010.1038/s41467-022-30724-7Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on GeLiyan Dai0Jinyan Zhao1Jingrui Li2Bohan Chen3Shijie Zhai4Zhongying Xue5Zengfeng Di6Boyuan Feng7Yanxiao Sun8Yunyun Luo9Ming Ma10Jie Zhang11Sunan Ding12Libo Zhao13Zhuangde Jiang14Wenbo Luo15Yi Quan16Jutta Schwarzkopf17Thomas Schroeder18Zuo-Guang Ye19Ya-Hong Xie20Wei Ren21Gang Niu22Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of ScienceState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of ScienceSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of SciencesElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityThe State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversitySuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of SciencesThe State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityThe State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityLeibniz-Institut für KristallzüchtungLeibniz-Institut für KristallzüchtungDepartment of Chemistry and 4D LABS, Simon Fraser UniversityDepartment of Materials Science and Engineering, University of CaliforniaElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong UniversityThe integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of transferrable BaTiO3-δ membrane with enhanced flexoelectricity on Ge (011).https://doi.org/10.1038/s41467-022-30724-7 |
| spellingShingle | Liyan Dai Jinyan Zhao Jingrui Li Bohan Chen Shijie Zhai Zhongying Xue Zengfeng Di Boyuan Feng Yanxiao Sun Yunyun Luo Ming Ma Jie Zhang Sunan Ding Libo Zhao Zhuangde Jiang Wenbo Luo Yi Quan Jutta Schwarzkopf Thomas Schroeder Zuo-Guang Ye Ya-Hong Xie Wei Ren Gang Niu Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge Nature Communications |
| title | Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge |
| title_full | Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge |
| title_fullStr | Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge |
| title_full_unstemmed | Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge |
| title_short | Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge |
| title_sort | highly heterogeneous epitaxy of flexoelectric batio3 δ membrane on ge |
| url | https://doi.org/10.1038/s41467-022-30724-7 |
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