Synthesis and characterization of gallium(III) dithiocarbamates as suitable nano-gallium(III) sulfide precursors
Gallium(III) complexes [Ga(chmdtc)3] (1) and [Ga(chedtc)3] (2) (where chmdtc=cyclohexylmethyldithiocarbamate and chedtc=cyclohexylethyldithiocarbamate) have been prepared and characterized by infrared, nuclear magnetic resonance (1H and 13C) spectra, thermogravimetry, X-ray photoelectron spectroscop...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2015-08-01
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| Series: | Main Group Metal Chemistry |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/mgmc-2015-0019 |
| Summary: | Gallium(III) complexes [Ga(chmdtc)3] (1) and [Ga(chedtc)3] (2) (where chmdtc=cyclohexylmethyldithiocarbamate and chedtc=cyclohexylethyldithiocarbamate) have been prepared and characterized by infrared, nuclear magnetic resonance (1H and 13C) spectra, thermogravimetry, X-ray photoelectron spectroscopy, and single crystal X-ray diffraction (XRD). The thermogravimetric curves obtained for both complexes are almost similar. The final residue corresponded to gallium sulfide (Ga2S3) above 700°C for complexes (1) and (2). In the single crystal X-ray structure of [Ga(chedtc)3] (2), Ga-S bonds, and the associated C-S bonds show asymmetry as a requirement of packing. The complex shows distorted octahedral geometry due to its bite angle variations. Nano-α-Ga2S3 was prepared from single source precursors [Ga(chmdtc)3] (1) and [Ga(chedtc)3] (2). Prepared nano-Ga2S3 have been characterized by powder XRD, energy-dispersive X-ray spectroscopy technique, and transmission electron microscopy (TEM)-selected area electron diffraction analysis showing the nano-sized nature of Ga2S3. TEM micrographs confirmed the size of the particles to be 50 nm. |
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| ISSN: | 0792-1241 2191-0219 |