Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions
Symmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time. A novel notch-assisted epitaxy scheme has been developed using faceted Si epitaxial (epi) layers as reactive-ion-etch mask to expose the vert...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8183426/ |
| _version_ | 1818853780113850368 |
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| author | Pouya Hashemi Jeng-Bang Yau Kevin K. Chan Tak H. Ning Ghavam G. Shahidi |
| author_facet | Pouya Hashemi Jeng-Bang Yau Kevin K. Chan Tak H. Ning Ghavam G. Shahidi |
| author_sort | Pouya Hashemi |
| collection | DOAJ |
| description | Symmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time. A novel notch-assisted epitaxy scheme has been developed using faceted Si epitaxial (epi) layers as reactive-ion-etch mask to expose the vertical intrinsic-base epi-seeding surfaces and the epi emitter and collector are automatically connected to the extension regions for metal contact and/or for electrical probing. Functional transistors with good quality device I-V characteristics were obtained with post-epi rapid thermal annealing. The results suggest a path forward for devices suitable for low-cost THz electronics applications. Some learning about the fabrication, as revealed from measured device characteristics, are discussed. |
| first_indexed | 2024-12-19T07:42:15Z |
| format | Article |
| id | doaj.art-08c33c8de9ce4899bdb83821fbea37e6 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-19T07:42:15Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-08c33c8de9ce4899bdb83821fbea37e62022-12-21T20:30:25ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01653754210.1109/JEDS.2017.27769028183426Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector RegionsPouya Hashemi0https://orcid.org/0000-0003-0208-2225Jeng-Bang Yau1Kevin K. Chan2Tak H. Ning3Ghavam G. Shahidi4Thomas J. Watson Research Center, IBM Research, Yorktown Heights, NY, USAThomas J. Watson Research Center, IBM Research, Yorktown Heights, NY, USAThomas J. Watson Research Center, IBM Research, Yorktown Heights, NY, USAThomas J. Watson Research Center, IBM Research, Yorktown Heights, NY, USAThomas J. Watson Research Center, IBM Research, Yorktown Heights, NY, USASymmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time. A novel notch-assisted epitaxy scheme has been developed using faceted Si epitaxial (epi) layers as reactive-ion-etch mask to expose the vertical intrinsic-base epi-seeding surfaces and the epi emitter and collector are automatically connected to the extension regions for metal contact and/or for electrical probing. Functional transistors with good quality device I-V characteristics were obtained with post-epi rapid thermal annealing. The results suggest a path forward for devices suitable for low-cost THz electronics applications. Some learning about the fabrication, as revealed from measured device characteristics, are discussed.https://ieeexplore.ieee.org/document/8183426/SOI Lateral BJTepitaxially grown emitter |
| spellingShingle | Pouya Hashemi Jeng-Bang Yau Kevin K. Chan Tak H. Ning Ghavam G. Shahidi Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions IEEE Journal of the Electron Devices Society SOI Lateral BJT epitaxially grown emitter |
| title | Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions |
| title_full | Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions |
| title_fullStr | Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions |
| title_full_unstemmed | Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions |
| title_short | Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions |
| title_sort | demonstration of symmetric lateral npn transistors on soi featuring epitaxially grown emitter collector regions |
| topic | SOI Lateral BJT epitaxially grown emitter |
| url | https://ieeexplore.ieee.org/document/8183426/ |
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